Allicdata Part #: | CP591X-2N2907A-CT-ND |
Manufacturer Part#: |
CP591X-2N2907A-CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP AMP SWITCH CHIP 1=400 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 200MHz Sur... |
DataSheet: | CP591X-2N2907A-CT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Frequency - Transition: | 200MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The CP591X-2N2907A-CT is a type of transistor primarily used in electronic circuits. It belongs to a category of transistors called a single-Bipolar Junction Transistor (BJT). This type of transistor works by using a base current to control the amount of current flowing between the collector and the emitter. This type of transistor is commonly used in power amplifiers, audio amplifiers, switching circuits, amplifier circuits and other devices that require linear gain amplification.
The main working principle of the CP591X-2N2907A-CT is based on the properties of three semiconductor layers: the base, collector and emitter. The base is a very thin layer of semiconductor material that controls the flow of current through the transistor. The collector, which is usually made from a thicker semiconductor material, receives current from the base and then transmits this current through the emitter. The emitter then passes the current from the collector to the circuit. By adjusting the base current, the amount of current that flows between the collector and the emitter can be changed, allowing for the amplification of a signal.
The CP591X-2N2907A-CT also has a collector-to-emitter breakdown voltage (BVCEO) of 40V. This means that the transistor can withstand a voltage of 40V before it begins to conduct. This high breakdown voltage is ideal for applications where the voltage may go beyond normal operating levels, and is particularly useful in amplifier circuits where the output voltage can be higher than the input voltage.
The CP591X-2N2907A-CT is commonly used in many applications due to its ability to provide linear gain amplification over a wide range of frequencies. It is often used in power amplifiers, audio amplifiers, switching circuits, amplifier circuits and other devices that require linear gain. It is especially useful in high-power applications, where the current and voltage will be high. It is also useful in applications where the breakdown voltage may need to be exceeded, as it has a high breakdown voltage of 40V.
In conclusion, the CP591X-2N2907A-CT is a type of transistor used primarily in electronic circuits. It belongs to a category of transistors called a single-Bipolar Junction Transistor (BJT). It works by using a base current to control the amount of current flowing between the collector and the emitter. It also has a collector-to-emitter breakdown voltage (BVCEO) of 40V, making it suitable for applications where the voltage may exceed normal levels. It is used in power amplifiers, audio amplifiers, switching circuits, amplifier circuits and other devices that require linear gain amplification, and is especially useful in high-power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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