CPV363M4K Allicdata Electronics
Allicdata Part #:

CPV363M4K-ND

Manufacturer Part#:

CPV363M4K

Price: $ 29.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT SIP MODULE 600V 6A IMS-2
More Detail: IGBT Module Three Phase Inverter 600V 11A 36W Thr...
DataSheet: CPV363M4K datasheetCPV363M4K Datasheet/PDF
Quantity: 1000
1 +: $ 29.90000
10 +: $ 29.00300
100 +: $ 28.40500
1000 +: $ 27.80700
10000 +: $ 26.91000
Stock 1000Can Ship Immediately
$ 29.9
Specifications
Current - Collector Cutoff (Max): 250µA
Base Part Number: CPV363M4
Supplier Device Package: IMS-2
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A
Power - Max: 36W
Current - Collector (Ic) (Max): 11A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Three Phase Inverter
IGBT Type: --
Part Status: Active
Description

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Introduction

CPV363M4K is an insulated gate bipolar transistor (IGBT) module and is mainly used for automotive power conversion applications such as motor drives, power supplies, welding applications and other power conversion applications. This module can be used from 4KW up to 5KW of power and its maximum load voltage is 1200V. It has an advanced gate turn-off (GTO) design and represents the next step in automotive power conversion technology.

What is IGBT?

An insulated gate bipolar transistor (IGBT) is a type of power semiconductor device, which has both electrical and thermal characteristics superior to MOSFETs (metal-oxide-semiconductor field-effect transistors) and BJTs (bipolar junction transistors). It is mainly used in medium and high power applications such as AC motor drives, power supplies and welding applications above 10KW.

How does the IGBT works?

The IGBT consists of two semiconductor elements, namely a PN Junction diode and an insulated gate transistor. The diode provides the voltage isolation and the transistor provides the switch function. The IGBT\'s insulated gate acts as a switch, which can be controlled with a low power input from the gate driver. When a positive voltage is applied to the gate, the PN junction diode becomes reverse biased and the transistor is turned on. When the voltage to the gate is removed, the transistor is turned off and the PN junction diode becomes forward biased.

CPV363M4K insulated gate bipolar transistor

The CPV363M4K is an advanced insulated gate bipolar transistor (IGBT) module, which offers improved switching performance and reliability compared to previous IGBTs. It has an advanced GTO (gate turn-off) design and has a higher voltage blocking capability of up to 1200V. This module is designed for automotive applications and has been tested in various applications such as motor drives, power supplies and welding applications. The CPV363M4K can be used in applications up to 4KW and 5KW of power. It is cost-effective and provides improved performance over traditional IGBTs.

Conclusion

The CPV363M4K IGBT module is an advanced module designed for automotive power conversion applications. It has an advanced GTO design and provides improved performance and reliability compared to previous IGBTs. This module can be used up to 4KW and 5KW of power, and has a maximum voltage blocking capability of up to 1200V. It provides cost-effective solutions for automotive power conversion applications such as motor drives, power supplies and welding applications.

The specific data is subject to PDF, and the above content is for reference

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