CR3F-100 TR Allicdata Electronics
Allicdata Part #:

CR3F-100TR-ND

Manufacturer Part#:

CR3F-100 TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE GEN PURP 1KV 3A DO201AD
More Detail: Diode Standard 1000V 3A Through Hole DO-201AD
DataSheet: CR3F-100 TR datasheetCR3F-100 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Description

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The CR3F-100 TR is a rectifier diode that is used for many applications, including power conversion, voltage regulating and locomotive engines. It is a low-cost solution for low-current applications and provides an energy efficient alternative to traditional silicon power diodes. The diode has a current capacity of 100A at 150V, and is designed to minimize rectification losses. The design uses a reverse-biased forward recovery characteristic, which helps reduce the power dissipation and reduce the need for a heatsink.

The forward-biased characteristic means that the voltage drop is almost constant regardless of the forward current, making it ideal for applications which require constant regulation of the output voltage (e.g. battery charging). The diode also provides low reverse turn-on voltage, which helps reduce power losses during the rectification process. The design also ensures that the diode will not become reverse biased, which helps prevent damage to other components in the circuit.

The principle of working of the CR3F-100 TR is based on the PN junction. This is achieved by forming a p-type semiconductor material on the top of an n-type semiconductor material. At the ‘P’ and ‘N’ junction the recombination of electrons and holes occurs. This leads to a voltage drop across the junction. When a voltage is applied across the diode, the current will flow in one direction only (i.e. forward biased), as the majority carriers move easily through the ‘n’ type material. When the applied voltage is reversed, the charges are strongly repelled and the current flow is blocked (i.e. reverse biased).

The CR3F-100 TR is widely used in the automotive, lighting, and solar power industries, as well as more traditional industrial applications such as high-voltage power supply designs and power converters. The diode is used in these applications because of its low cost, high efficiency, and high reliability. It is also used in many alternative energy applications such as solar panels and wind turbines. They are also used in power distribution systems to control voltage and current levels.

The CR3F-100 TR is well suited for a variety of power conversion, voltage regulating and locomotive engine applications. It is well suited for applications requiring low power losses and reliability. The low on-state voltage drop of the diode ensures efficiency, even under high-current conditions, and the reverse-biased forward recovery characteristic helps minimize power dissipation. The design also ensures that the diode will not become reverse biased, which helps prevent damage to other components in the circuit. The CR3F-100 TR is an efficient, reliable and cost-effective solution for many types of power conversion and regulating applications.

The specific data is subject to PDF, and the above content is for reference

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