CRZ22(TE85L,Q,M)

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The CRZ22, also known as TE85L, Q, M, is a diode designed for a variety of applications and contains a single zener diode. It is designed to provide protection against reverse voltages and is used in various consumer and industrial applications. The CRZ22 is available in a variety of package sizes and formats, including through-hole, surface-mount and leadless packages. This makes it very versatile and useful for a wide range of applications.

The CRZ22 is a two-terminal device that consists of two main sections: an anode and a cathode. When reverse-biased, the diode will begin to conduct current and the current will decrease as the voltage is increased further. The amount of current that will be conducted is determined by the voltage difference between the anode and the cathode, and this is known as the breakdown voltage, or the Zener voltage. The breakdown voltage of the CRZ22 can be adjusted by varying the doping level of the semiconductor material used in the diode.

The main purpose of the CRZ22 is to provide protection against excessive reverse voltages, preventing the damage they can cause to sensitive electronics such as computers and other digital equipment. The device is typically connected in series with a load and will “breakdown” as the voltage reaches its specified Zener voltage. As the voltage reaches the Zener voltage, the diode begins to conduct, allowing the current to pass through it and protecting the load from the excessive voltage.

Other applications of the CRZ22 include power supply regulation and semiconductor device protection. The diode can be used as a voltage regulator to ensure that the output of the power supply stays within reasonable limits. It is also used to protect transistors and other semiconductor devices from excessive voltages, preventing them from being damaged.

The CRZ22 is a reliable, robust and versatile device. It is available in a variety of package sizes and formats to suit your needs, and it is well suited for a range of applications, providing protection against reverse voltages, voltage regulation, and semiconductor device protection.

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