CURM101-G

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CURM101-G is a single rectifier diode comprised of a metal oxide semiconductor (MOS). It is widely used in power-electronic and industrial applications.

The CURM101-G diode is a great fit for applications requiring high current conduction and low on-state resistance. It offers an operating voltage range of 15V–30V, a continuous forward current of 0.6A–10A, a reverse voltage (Vr) of 30V, an inductive charging current of 6A, and a high peak power dissipation of 30W.

When used as a rectifier, the CURM101-G provides superior performance in a wide range of applications, including power electronic circuits, switching power supplies, motor control, relays, and contactors. One of its primary advantages is its ability to handle high current in pulse mode with low power losses.

The working principle of the CURM101-G is based on the MOS-based Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This technology provides low on-state resistance and high efficiency.

The CURM101-G diode utilizes a number of technologies, such as fast switching and reverse recovery, to enable excellent electrical performance. Its quick recovery time helps to prevent high inrush current and reduce power consumption. Additionally, its low on-state resistance reduces power losses, making it highly efficient.

In addition, the reverse blocking voltage minimizes the impact of drain feedback capacitance. This helps reduce the external components required for a unregulated power supply and improves overall system reliability.

Finally, the CURM101-G diode is engineered with a temperature monitoring circuit. This ensures that the maximum temperature is not exceeded, helping to protect the device from thermal damage and potentially catastrophic failure.

Overall, the CURM101-G single rectifier diode is an ideal choice for a wide range of power electronic applications. It offers excellent performance in pulse mode, low on-state resistance, and reverse blocking voltage for improved reliability. The temperature monitoring circuit also adds an extra layer of protection from thermal damage. Therefore, the CURM101-G diode is an excellent option for power electronic designs.

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