CY14B101KA-ZS25XI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	CY14B101

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Introduction to CY14B101KA-ZS25XI

The CY14B101KA-ZS25XI, otherwise known as a Single-Supply Quad Non-Volatile SRAM, is a type of volatile random access memory (RAM) that is being increasingly used in modern computing applications. As the name implies, this type of memory is designed to operate on a single power source, which makes it extremely versatile and suitable for use in modern electronics. In addition to its power source, another key feature of this type of memory is its non-volatile nature, meaning that it can store and maintain data for a long period of time without requiring a power source.

CY14B101KA-ZS25XI Application Fields

This type of memory has a number of applicational areas, ideal for scattered systems or applications where data must be retained during power interruption. Furthermore, the CY14B101KA-ZS25XI can be deployed in a variety of different industries, including:

• Automotive – Vehicle infotainment systems, powertrain controllers, and other mission-critical applications with stringent power requirements.
• Industrial – Process control systems, automation equipment, and monitoring devices in harsh environments.
• Consumer - Digital cameras, portable medical devices, gaming systems, and other electronics.
• Military & Aerospace – Navigation systems, data storage for spacecraft, and mission-critical equipment.

CY14B101KA-ZS25XI Working Principle

The CY14B101KA-ZS25XI is designed to operate by providing an electric field across a layer of sandwiched charge-storage material that is sensitive to electric fields. By applying an electric field across the Charge Trap Flash (CTF) cells, it stores and maintains electric charge in the form of electrons. This charge can then be read as data providing that the voltage is within the specified range.The electric charge can also be changed by applying either positive or negative voltages. This allows the CY14B101KA-ZS25XI to store and maintain data during the most extreme conditions, such as during a power interruption. Furthermore, all of the data stored on the memory chip is non-volatile, meaning that it will not be lost even if the power supply is interrupted.

Conclusion

The CY14B101KA-ZS25XI is a type of volatile random access memory (RAM) designed to operate on a single power source. Its non-volatile nature means that it can store and maintain data for a long period of time without requiring a power source. This makes it extremely versatile and suitable for use in a variety of different industries, such as automotive, industrial, consumer, and military & aerospace. Furthermore, its operation relies on providing an electric field across a layer of charge-storage material, meaning that its data can be retained even during power interruptions.

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