CY14MB256J1-SXI Allicdata Electronics
Allicdata Part #:

CY14MB256J1-SXI-ND

Manufacturer Part#:

CY14MB256J1-SXI

Price: $ 5.20
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 256K I2C 3.4MHZ 8SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: CY14MB256J1-SXI datasheetCY14MB256J1-SXI Datasheet/PDF
Quantity: 79
1 +: $ 4.73130
10 +: $ 4.35645
25 +: $ 4.26586
50 +: $ 4.25061
Stock 79Can Ship Immediately
$ 5.2
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: --
Memory Interface: I²C
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: CY14MB256
Description

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CY14MB256J1-SXI is a synchronous static RAM (SSRAM) component provided by Cypress Semiconductor. This component has a total capacity of 256k bits, which is organized as 256K by 8 bits in a single package. It has a minimal number of address pins and is designed for easy interface to standard bus configurations for various microcontroller and embedded systems. In addition to its high-speed access time and low-power consumption, this component also provides users with an asynchronous active power-down mode, fast access rates of 70ns (typical) or 90ns (maximum), and a standby mode.

Due to its optimal combination of speed and low power consumption, the CY14MB256J1-SXI component is widely adopted for Memory applications. It is suitable for use in embedded systems operating at frequencies up to 70 MHz, and is particularly well-suited for applications that require fast access time, low voltage operation, and high memory density. Typical applications include automotive systems, handheld devices, audio systems, mobile phones, PDAs, and smartcards.

The CY14MB256J1-SXI component uses synchronous access timing and requires a single power supply. It is supported by an I/O interface available in either 5V or 3V, which allows low-voltage operation. The component also supports an asynchronous power-down mode and a standby mode, which minimizes power consumption while maintaining data retention.

The working principle of the CY14MB256J1-SXI component is based on dynamic memory cell technology, which is designed to offer minimum access times and higher density than static RAMs. It employs a chip select address decode function, allowing for fast and efficient address selection. The component uses two active-low control signals for selecting the chip for read or write operations. Once the chip is selected, the 8-bit wide data bus can be used for transferring data. During a write operation, the I/O pins are driven to transfer data from the memory device to the system. During a read operation, the I/O pins are used to read data from the memory array and output it to the system.

In summary, the CY14MB256J1-SXI component features fast access time, low-voltage operation, and high memory density, making it ideal for Memory applications. It employs dynamic memory cell technology for minimum access times, and supports an asynchronous power-down mode and standby mode for low power consumption. The component also uses chip select address decode function for fast and efficient address selection, and two active-low control signals for selecting the chip for read or write operations.

The specific data is subject to PDF, and the above content is for reference

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