CY14B101J1-SXI Allicdata Electronics
Allicdata Part #:

428-3164-ND

Manufacturer Part#:

CY14B101J1-SXI

Price: $ 7.12
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 1M I2C 3.4MHZ 8SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8...
DataSheet: CY14B101J1-SXI datasheetCY14B101J1-SXI Datasheet/PDF
Quantity: 72
1 +: $ 6.47010
10 +: $ 5.99067
25 +: $ 5.85472
50 +: $ 5.82259
Stock 72Can Ship Immediately
$ 7.12
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: --
Memory Interface: I²C
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: CY14B101
Description

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CY14B101J1-SXI Memory Application Field and Working Principle

The CY14B101J1-SXI is an asynchronous SRAM that is denser and faster than traditional SDRAM. It is widely used in a variety of applications, from laptops to data centers, due to its relative affordability and wide range of features. An understanding of the working principle and application fields in which it is used can have a positive impact on the efficiency and security of any system.

What is CY14B101J1-SXI SRAM?

CY14B101J1-SXI SRAM, also known as a synchronous random access memory (SRAM), is a type of device that stores data by using a synchronous clock signal to replace the conventional asynchronous circuitry. This enables it to run at a higher data rate and access multiple locations at the same time, reducing read and write latency for faster system response times. CY14B101J1-SXI SRAM has higher densities than conventional SDRAM, allowing for much larger capacities with the same physical space.

Working Principle

CY14B101J1-SXI SRAM works on the principle of dynamic random access memory (DRAM). In contrast to SDRAM, which is an asynchronous technology, DRAM is a synchronous technology that uses a voltage-controlled oscillator (VCO) to control the refresh rate of the memory cells. The working principle of CY14B101J1-SXI SRAM is essentially the same as other DRAMs but with a more sophisticated architecture. It is capable of accessing multiple locations of memory in parallel while still maintaining a high data rate and low latency.

Application Field

CY14B101J1-SXI SRAM is ideal for a variety of applications that require high data rates, large capacities, and low latency. It is used in laptops and embedded systems for storing data quickly, and in data centers for caching large amounts of data with low CPU utilization. It is also used in gaming applications, where its high-speed access times can improve system performance. In addition, CY14B101J1-SXI SRAM is used in automotive electronics, industrial automation, and other applications where a reliable memory is needed.

Benefits of CY14B101J1-SXI SRAM

CY14B101J1-SXI SRAM offers a number of benefits over conventional memory technologies. It has higher densities than SDRAM, which enables larger capacities with less physical space. Additionally, its synchronous architecture enables it to run at much higher data rates with lower latency, making it ideal for high-speed applications. It also offers better power efficiency than traditional SDRAM, making it ideal for mobile devices and embedded systems.

Conclusion

CY14B101J1-SXI SRAM is a type of asynchronous SRAM that is faster and denser than traditional SDRAM. It is used in a variety of applications, from laptops to data centers, due to its relative affordability and wide range of features. It works on the principle of DRAM and offers a number of benefits, such as low latency, high data rates, and low power consumption. It is an ideal choice for applications that require fast access and large capacities.

The specific data is subject to PDF, and the above content is for reference

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