CY14B101KA-ZS25XIT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	CY14B101

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory: CY14B101KA-ZS25XIT

Memory technology still plays a key role in the mobile computing space, powering next-gen products with improved reliability, power efficiency and cost effectiveness. Companies like Cypress Semiconductor have developed a variety of memory solutions to meet the ever-increasing demands on personal computing devices. In particular, the CY14B101KA-ZS25XIT is a 512 Mb Serial Flash Memory designed for use in a variety of mobile devices and applications.The CY14B101KA-ZS25XIT is designed to address the need for high-performance and reliable non-volatile memory solutions. It is a 3.3V memory device that supports up to 1 Gb of non-volatile memory storage. The device features industry-leading features such as Dual Channel programming, Dual-Bank Architecture and Quad-Level Cell (QLC) technology.In terms of application fields, the CY14B101KA-ZS25XIT is suitable for a variety of applications, including Smartphones, Tablet PCs, Wearable Devices, and Set-Top Boxes. The device is ideal for these applications because it offers extremely fast data read speeds, low-power consumption, and high-reliability. It is also suitable for use in consumer electronics, automotive and medical applications.At the core of the device is its fast read access times. The CY14B101KA-ZS25XIT offers Single Read and Dual Read modes, with access times as low as 8ns. This makes it ideal for consumer devices where fast data retrieval is a key requirement.The device also features a novel Quad-Level Cell Architecture. This architecture enables the device to store four “bits” of information in each cell, improving storage density and scalability. As such, the CY14B101KA-ZS25XIT features higher storage density than other devices on the market.In terms of the working principle, the CY14B101KA-ZS25XIT utilizes a voltage sensing mechanism whereby a voltage range is applied to the memory cells. As the voltage applied to the memory cells approaches the threshold values, a logic “1” is stored when the cells reach the threshold and a logic “0” is stored when the cells do not reach the threshold. This method allows for extremely fast access times and high reliability.The CY14B101KA-ZS25XIT also features an enhanced security feature, which can be used to protect sensitive data. This feature allows the user to enable secure data storage, authentication, and erase/restore. This ensures that user data is kept secure and secure operations are enabled.The CY14B101KA-ZS25XIT is an impressive memory device that offers a variety of features for a wide range of applications. Its high-performance, reliability, and scalability make it an ideal solution for mobile and connected products. Furthermore, the combination of the QLC architecture and enhanced security features make it well suited for demanding applications in areas such as consumer electronics and automotive.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description