CY14B104L-BA25XIT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-FBGA (6x10)
Base Part Number:	CY14B104

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Introduction

The CY14B104L-BA25XIT is a 4Mb pseudo-static RAM that uses advanced silicon-on-insulator (SOI) technology to deliver the highest density and lowest power pseudo-static RAM available. By combining advanced SOI process technology and innovative design techniques, the CY14B104L-BA25XIT offers superior performance and reliability at a minimal cost.

Memory Application

The CY14B104L-BA25XIT is well suited for use as a system, network or application memory. The CY14B104L-BA25XIT provides the performance, reliability and cost benefits needed in modern systems. It is particularly suitable for use in embedded, mobile, wireless and high-performance computing applications. The CY14B104L-BA25XIT is an ideal choice for high-performance systems due to its superior bandwidth and low power consumption. It is also a great choice for mobile and wireless applications due to its small form factor and low power requirements. In addition, the CY14B104L-BA25XIT offers the flexibility, scalability and low cost benefits needed in embedded, network and application systems.

Working Principle

The CY14B104L-BA25XIT is a pseudo-static RAM that stores data in a self-contained manner, allowing for rapid read/write operations. The RAM utilizes a combination of cells, transistors and capacitors to store and retrieve data. The most commonly used cells are the DRAM (Dynamic Random Access Memory) cell and the SRAM (Static Random Access Memory) cell. The Dynamic RAM cell consists of an access transistor, a storage capacitor and a bit line. Data is stored in the capacitor and read from or written to the bit line by the access transistor. The Static RAM cell also consists of an access transistor, but instead of a capacitor it contains flip-flop latches for long-term storage. Data is stored in the latches and read from or written to the access transistor.The CY14B104L-BA25XIT uses a combination of both DRAM and SRAM cells to achieve its high performance and low power requirements. The use of the advanced SOI process technology means that the chip is more power-efficient than traditional memory chips. The pseudo-static RAM also offers the added benefit of low refresh rates, making it ideal for use in systems with high refresh rates such as wireless and mobile applications.

Conclusion

The CY14B104L-BA25XIT is an advanced pseudo-static RAM that utilizes silicon-on-insulator process technology to deliver the highest density and lowest power pseudo-static RAM available. It is ideal for use in embedded, mobile, wireless and high-performance computing applications due to its superior performance and reliability. In addition, its low power consumption and flexibility make it an excellent choice for a variety of memory applications. The CY14B104L-BA25XIT also offers the added benefit of low refresh rates, making it ideal for use in systems with high refresh rates such as wireless and mobile applications.

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