Allicdata Part #: | CY14B104L-ZS20XC-ND |
Manufacturer Part#: |
CY14B104L-ZS20XC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 4M PARALLEL 44TSOP II |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8... |
DataSheet: | CY14B104L-ZS20XC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | CY14B104 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY14B104L-ZS20XC is a type of memory device manufactured by Cypress Semiconductor. It is a non-volatile F-RAM memory device with 2,097,152 bits of storage capacity. It is a Serial Peripheral Interface (SPI) compatible device that utilizes Ferroelectric Random Access Memory (F-RAM) technology to store data in a static, repeatable form for extended periods of time. It has been designed to be robust and reliable, making it the perfect choice for applications in which data must be stored permanently and in a retrievable format.
The CY14B104L-ZS20XC has a wide range of applications, including aerospace, medical, industrial, consumer and automotive. Its non-volatile F-RAM technology makes it ideal for applications that require reliable data storage, such as data logging and control systems. It can be used in combination with microcontrollers and other embedded systems to store critical data. Its fast read and write speeds make it a suitable choice for applications that require quick data transfer such as communication systems.
In terms of its working principle, the CY14B104L-ZS20XC utilizes F-RAM technology to store data. This unique technology is a non-volatile form of random access memory that relies on the properties of ferroelectric materials to store information “in place”. Ferroelectric materials are crystalline materials that have the ability to store electrical charges and retain them indefinitely. This means that information stored in F-RAM can be read and rewritten many times without any degradation or power loss.
The CY14B104L-ZS20XC has an unlimited number of write/read cycles, making it an ideal choice for applications in which data must be permanently stored. It has a wide range of operating temperatures and is ESD protected up to 4KV, ensuring reliable operation even in harsh operating environments. It is also JEDEC compliant, meaning it meets all the latest industry standards.
Overall, the CY14B104L-ZS20XC is a robust, reliable memory device with a wide range of applications. Its non-volatile F-RAM technology makes it suitable for applications in which data must be stored permanently and in a retrievable format. It has an unlimited number of write/read cycles and is ESD protected up to 4KV, making it the ideal choice for harsh operating environments.
The specific data is subject to PDF, and the above content is for reference
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