| Allicdata Part #: | CY14B104L-ZS25XCT-ND |
| Manufacturer Part#: |
CY14B104L-ZS25XCT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC NVSRAM 4M PARALLEL 44TSOP II |
| More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8... |
| DataSheet: |  CY14B104L-ZS25XCT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | NVSRAM |
| Technology: | NVSRAM (Non-Volatile SRAM) |
| Memory Size: | 4Mb (512K x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package: | 44-TSOP II |
| Base Part Number: | CY14B104 |
Description
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Memory is an indispensable component of computers, and CY14B104L-ZS25XCT is a kind of memory. This kind of memory is mainly used to store computers. Here, we will briefly discuss its application field and working principle.
Application Field
CY14B104L-ZS25XCT is a kind of advanced type of static RAM, commonly used in computer main memory, embedded system and industrial control system, etc. It uses Bytes-selectable architecture, allowing devices to configure data widths of 8, 16, 32 or 64 bits.
It is developed specifically for low-power operation, with operating power consumption as low as 10 mA in 64K and less than 1 microamp in standby mode. So it is mainly used in battery- operated system, such as hand-held device, notebook computers and so on.
Working Principle
CY14B104L-ZS25XCT uses a silicon gate MOS storage cell to provide the best performance in an ultra-low-power memory device. The memory cell consists of a standard MOSFET transistor with a pair of cross-coupled gates to store a single bit of data. The information stored in each cell is maintained in dynamic fashion, meaning that it needs to be read or refreshed every 10.2μs.
The device features a split-gate design that ensures simultaneous updating of dual port cell. The static RAM loads a complete page of data j into the internal registers and reads or writes the page in just one access cycle. The device can configure data widths of 8, 16, 32 or 64 bits, and it can make simultaneous access of the page data, which is why the device is ideal for low-power applications.
In summary, CY14B104L-ZS25XCT is a low-power static RAM mainly used in battery-operated system, such as hand-held device, notebook computers and so on. It uses a silicon gate MOS storage cell to provide the best performance in an ultra-low-power memory device, which refreshes every 10.2μs. The static RAM loads a complete page of data j into the internal registers and reads or writes the page in just one access cycle, making it ideal for low-power applications.
The specific data is subject to PDF, and the above content is for reference
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