CY14B104L-ZS25XI Allicdata Electronics
Allicdata Part #:

CY14B104L-ZS25XI-ND

Manufacturer Part#:

CY14B104L-ZS25XI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 44TSOP II
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: CY14B104L-ZS25XI datasheetCY14B104L-ZS25XI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY14B104
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY14B104L-ZS25XI is a serial 256Kx18 asynchronous SRAM and belongs to the memory category. Its applications mainly rely on its many advantages, such as low cost, low power consumption and high speed. The memory chip is suitable for many different situations due to its wide range of applications.

Memory, in general, can be divided into two types: RAM (Random Access Memory) and ROM (Read Only Memory). RAM is used to store data, whereas ROM is primarily used to store instructions. In some complex computing systems, both RAM and ROM are necessary to ensure efficient operation. Asynchronous SRAM is one of the most widely used RAM chips in computers and in other electronic systems.

CY14B104L-ZS25XI is organized as 1 Meg x 18 asynchronous SRAM that offers 256K x 18 words of data storage. This memory chip features access times as low as 20 ns and can operate from a single 3.3V or 5V power supply. The device utilizes source-synchronous signaling and can be configured to operate in both byte-wide fast page mode and in byte-wide extended data output mode. In addition, its asynchronous address and data bus interface is compatible withindustry standard device architectures.

This kind of memory is widely used in many industrial applications. It is often used in computers, mobile phones, digital cameras, and other consumer electronics. It is also used in embedded systems such as automotive systems, industrial control systems and consumer products. Moreover, its high speed can provide better performance in high-end computing applications, such as servers and gaming consoles.

On the working principle aspect, CY14B104L-ZS25XI adopts a fast page mode and extended data output mode which enable the chip to output data quickly. In fast page mode, the device operates by reading data from the same row of memory cells. This mode allows a quick response to memory access requests since only one row of memory cells access is required. In extended data output mode, the chip can start data transfers for consecutive addresses within the page as soon as the first data output is enabled. This makes it possible to read multiple memory locations in one single cycle.

CY14B104L-ZS25XI proves to be an excellent choice for many types of applications due to its low power consumption and high speed. The chip offers reliable performance and can work efficiently in a wide range of environments. It is also relatively easy to interface with and compatible with a variety of architectures.

The specific data is subject to PDF, and the above content is for reference

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