CY14B104LA-ZS25XI Allicdata Electronics
Allicdata Part #:

CY14B104LA-ZS25XI-ND

Manufacturer Part#:

CY14B104LA-ZS25XI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 44TSOP II
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: CY14B104LA-ZS25XI datasheetCY14B104LA-ZS25XI Datasheet/PDF
Quantity: 2
Stock 2Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY14B104
Description

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Memory

CY14B104LA-ZS25XI is a type of memory device which is used in a wide variety of applications across industries. It is a low power Static Random Access Memory (SRAM) that is used for storing and retrieving data.

The CY14B104LA-ZS25XI chip offers multiple features that make it a desirable option for many applications. It is a single-chip, low-power static random access memory (SRAM) solution. Its 25XI allows it to store up to 4,096bits or 512Kbytes. The chip has been designed to operate over a temperature range of -40°C to +85°C. It has a maximum access time of 25ns at 2.5V and a stand-by current of 10μA max. The part is available in either a 10-ball micro leadframe package (UQFN) or a Pb-Free Chip Carrier package.

The CY14B104LA-ZS25XI chip provides nonvolatile storage and is used as a form of flash memory, to store data on a computer system. It is commonly used in embedded systems, where nonvolatile memory storage applications are needed. The chip also can be used for various other applications, such as storing data for industrial automation systems, security systems, embedded control systems, and any other application requiring nonvolatile storage.

CY14B104LA-ZS25XI is designed to have an edge in working when compared to normal memories. It operates using CMOS technology and provides low-power operation while maintaining a low standby current. It offers faster access times, higher endurance and data retention than traditional dynamic RAM. It also has better noise immunity than traditional dynamic RAM, which makes it ideal for applications where noise immunity is important. The combination of low power, faster access time and data retention make CY14B104LA-ZS25XI a great solution for any nonvolatile memory storage application.

The working principle of CY14B104LA-ZS25XI is quite simple. It is made up of two transistors for each memory cell. Data is stored in each cell by controlling the amount of charge in the paired transistors. When only one transistor holds a value, it is referred to as a "zero" but when both transistors hold a value, it is referred to as a "one". Data is written to the memory by sending an appropriate voltage to both transistors, changing their respective charge levels.

CY14B104LA-ZS25XI offers a reliable and convenient solution for computers and other device applications. When compared to traditional dynamic RAM, it has higher endurance and data retention and can run on a lower power. Its combination of features make it an ideal choice for any memory storage application.

The specific data is subject to PDF, and the above content is for reference

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