CY14B104N-BA25XC

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CY14B104N-BA25XC is a high-speed CMOS static RAM model released by Cypress Semiconductor. It is typically used in message buffering, read-lookahead buffering, and burst mode designs. This memory combines fast access times with low power consumption and a wide operating temperature range. Its high performance, low power characteristics make it particularly suitable for higher speed, battery-powered applications.

The CY14B104N-BA25XC is organized as 1Mx8 bits, programmable up to 16Mx8 bits. It has an access time of 7ns, burst mode data transfer rates up to 50Mbits/sec, software and hardware write control, and on-chip referential address capability, among other features. It also offers highly efficient power management, making it an ideal solution for embedded systems.

In terms of applications, the CY14B104N-BA25XC has a broad range of applications, from network switches and routers to medical instruments, for industrial automation and control, communications, consumer and automotive applications. This memory can also serve as a powerful tool for improving real-time performance in data acquisition, control and monitoring systems.

In terms of working principle, the CY14B104N-BA25XC is composed of logic circuitry, address registers, and a Dynamic Random Access Memory (DRAM) array. It stores data as a binary number of 8-bit bytes. When a memory location is addressed, the contents of that memory location are read out and placed in the register. This enables the microprocessor to work with the data in the register instead of accessing the much slower memory device.

The CY14B104N-BA25XC uses the latest in advanced trace emission control (ATEC) technology which is used to reduce pin power consumption. The low-power operating mode can be used to extend battery life or reduce system power consumption in steady state operation. The device’s I/O cells are designed with a dedicated hard-wired bank select input for supporting Burst Mode operations.

In addition, the CY14B104N-BA25XC has built-in refresh circuitry which allows for both burst and random access refresh cycles. This refresh feature minimizes refresh overhead and reduces system power consumption. The CY14B104N-BA25XC also features intelligence Power Fail Detection (PFD) which can detect an impending power drop in real-time before the power drops below a certain level.

The CY14B104N-BA25XC also supports data integrity assurance using Error Detection and Correction safeguards. Its on-chip ECC feature helps ensure reliable data storage even in applications where the data may be subject to unpredictable radiation. This ensures that important data is not compromised and that system integrity is maintained in all operating conditions.

The CY14B104N-BA25XC is an advanced memory device that is suitable for a variety of designs due to its fast access times, low power consumption, and wide operating temperature range. It is an excellent choice for higher speed and battery-powered applications, due to its high performance and power management. Furthermore, it is also suitable for a wide range of applications including network switching, industrial automation and control, medical instruments, and consumer and automotive applications.

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