Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-FBGA (6x10)
Base Part Number:	CY14B104

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Introduction to CY14B104N-BA25XCT

CY14B104N-BA25XCT is a type of synchronous static random access memory (SRAM) device from Cypress Semiconductor Corporation. It is designed to provide high-speed and reliable data storage solutions for embedded processor, digital signal, and other system-on-chip (SoC) applications. The device is constructed of polysilicon and consists of 4,194,304 cells, each arranged in a 64x64 matrix. It is designed to operate in multiple voltages and features an operating temperature range from -40°C to +85°C.

Application Field

CY14B104N-BA25XCT can be used in a variety of applications, such as consumer electronics, medical devices, automotive systems, and more. In consumer electronic devices, it can be used for memory caching, data streaming, and high speed gaming. For medical applications, the device can be used for image storage, digital x-ray, and patient data analysis. For automotive systems, it can be used for data storage and central control unit operations.

Working Principle

CY14B104N-BA25XCT uses a synchronous architecture to provide high performance data storage with very low power consumption. The idea behind this type of memory architecture is that the memory controller is used to synchronize the operation of RAM cell access requests and write operations. Whenever a write request is made, the memory controller sends out an access command to the RAM cell. This command is then processed by the RAM cell and the data is either written or read, depending on the type of access request. The memory cell is made up of a pair of transistors, which are arranged as complementary metal oxide semiconductor (CMOS) logic gates. When the memory cell is in the read mode, the device consists of a pair of transistors that act as a pass transistor latch. As a result, when the access command is sent from the controller, the gate is on and the contents of the cell are read out. Similarly, when the memory cell is in the write mode, the device consists of two transistors that act as a cross-coupled inverter. As a result, when the access command is sent from the controller, the gates are on, and the data is written into the cell.

Conclusion

CY14B104N-BA25XCT is a high speed and reliable SRAM device which can be used in a wide variety of applications, such as consumer electronics, medical devices, automotive systems and more. The device utilizes a synchronous architecture for its data storage operations and is constructed of polysilicon and consists of 4,194,304 cells, each arranged in a 64x64 matrix. In addition, it is designed to operate in multiple voltages and features an operating temperature range from -40°C to +85°C.

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