CY14B104N-BA25XI Allicdata Electronics
Allicdata Part #:

CY14B104N-BA25XI-ND

Manufacturer Part#:

CY14B104N-BA25XI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1...
DataSheet: CY14B104N-BA25XI datasheetCY14B104N-BA25XI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

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CY14B104N-BA25XI is a type of memory device developed by Cypress Semiconductor and is part of the Automata Processor family. It is an asynchronous Static Random Access Memory (SRAM), built using a unique design technique called “cellular automata processing”, which makes it stand a part from ordinary SRAMs. The manufacture of this device allows it to be used in many applications, considerations being taken on the cost, area efficiency and timing constraints.

To understand the application field of CY14B104N-BA25XI, it is necessary to delve in the working principle of it. The main function of this memory device is to store and retrieve information, making it a widely used component in many computer systems. The storage capacity of this device is based on the number of cells and patterns within each one of them. A single cell comprises two bits for storing data, arranged in a three-bit pattern. This pattern is composed by a logic combination of 0, 1, and X (don’t care) values, which represent the possible data stored by those two bits. Therefore, the device is structured by a matrix of cells that can store an unlimited number of patterns.

With the technology of cellular automata, this device can reach rates up to 50 MHz and can be operated with any voltage between 1.8 and 3.3 V, with an additional tolerance of ± 10 %. This makes it suitable to be used in many applications, even those with demanding power requirements, such as laptops and desktop computers, where minimal power consumption is needed, or those with higher speed requirements, such as automobiles for embedded systems, test and measuring equipment, etc. Additionally, it can be used in combination with synchronous DRAM making it apt to serve as a bridge to high speed DRAMs. These features make CY14B104N-BA25XI one of the most versatile memory device available for applications that require low power and high speed.

In relation to its operating principle, CY14B104N-BA25XI functions as an asynchronous static RAM. It works based on the cells composed by a pattern of three bits. These cells are arranged in a matrix, the information is stored in them and the results of the operations taking place in the device are found in the output of the cells. This output is determined after a clock signal changes the state of the device. The fact that this device is asynchronous means that the operations take place already when the clock fires, making it faster than RAMs with synchronous access. This device can be both read and programmed while operating in its static state, which eliminates the need of refreshing it after a given time.

In conclusion, CY14B104N-BA25XI is an asynchronous static RAM built using the technique of cellular automata processing. This feature grants to this device the capability to be used in many applications with low power and high speed requirements. Its storage capacity is based on the number of cells that compose the device, each one of them able to hold two bits in a pattern of three, where 0, 1, and X values represents the stored data. The operations take place when the clock fires and they are found on the output of the cells. It is one of the most versatile memory device available.

The specific data is subject to PDF, and the above content is for reference

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