CY14B104N-ZS25XCT

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Memory is a primary form of computer data storage. The CY14B104N-ZS25XCT is a robust, non-volatile memory device specifically designed to meet the needs of consumer, industrial, and automotive applications. It features an extremely low power requirement and an extended temperature range for reliable operation in harsh environments.

The CY14B104N-ZS25XCT is a 4M-bit CMOS static random access memory (SRAM) device organized into two blocks of 2M-bits each. It utilizes a double data rate architecture to achieve high-speed operation while consuming very low power. All inputs and outputs are TTL-compatible and suitable for use with 3.3V systems. The device is designed to operate with a maximum clock frequency of 25MHz.

The CY14B104N-ZS25XCT is also designed to support data self-refresh, meaning that it can store data for a long time even if the power supply is cut off. In self-refresh mode, the device can maintain data retention up to 16ms. This feature allows the device to be used in applications where it is powered on only occasionally, eliminating the need to power it down completely in between use.

The CY14B104N-ZS25XCT is a highly reliable device that is also available in a version with advanced testing features. This version of the device utilizes built-in diagnostics to ensure high yields and product reliability. It also features a read/write verification test to help ensure high-quality data output.

The CY14B104N-ZS25XCT is suitable for a wide range of consumer, industrial, and automotive applications such as GPS systems, storage media gaming applications, multimedia recording/retrieval, medical equipment, and network security systems. Its wide temperature range, low power consumption, and extended self-refresh capabilities make it an ideal device for applications requiring long periods of data storage without continuous power.

This memory device works by storing data in an array of memory cells. Each memory cell typically consists of one or more transistors and a small amount of capacitive charge to hold the stored data. Data are written into the memory cell by moving electrons around, and each bit is stored as a binary value (1 or 0). When the memory device is read, the electrical charges stored on the capacitances determine the binary value of the bits stored in the memory.

The CY14B104N-ZS25XCT memory device is an ideal choice for applications requiring robust data storage in a low-power configuration. With its extended temperature range, low power consumption, and data self-refresh capabilities, it is well-suited for harsh environments and applications requiring long-term data storage.

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