Allicdata Part #: | CY14B104NA-BA25I-ND |
Manufacturer Part#: |
CY14B104NA-BA25I |
Price: | $ 18.98 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 4M PARALLEL 48FBGA |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1... |
DataSheet: | CY14B104NA-BA25I Datasheet/PDF |
Quantity: | 1000 |
299 +: | $ 17.24790 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA |
Supplier Device Package: | 48-FBGA (6x10) |
Base Part Number: | CY14B104 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY14B104NA-BA25I is an eFuse device designed for use in high performance, low power designs in which flexibility, security, and ease of implementation are essential requirements. It is a volatile, integrated circuit memory device that can be used to store digital information. It\'s characterized by good thermal and electrical stability, low power consumption, and high data integrity.
The application fields of CY14B104NA-BA25I include embedded systems, such as a system-on-chip (SoC) design, data logging, application-specific circuitry, supervisory circuits and timing circuits. It has various advantages, such as reliability and high write speed, which make it suitable for use in many applications. The device can be used in applications such as car systems, consumer appliances, computers and other electronic products.
The working principle of the CY14B104NA-BA25I is based on flash memory technology. The device is operated by applying a voltage across two terminals known as the source and drain. The voltage is then used to store information in a flash memory array. In order to write data to the flash memory array, a write bit is applied to the source terminal, which causes electrons to be injected or pushed into the memory element. The injected electrons are then trapped in the memory element, resulting in an irreversible change in the stored data.
When the data is retrieved from the memory element, the trapped electrons are released, allowing the stored data to be read out. The structure of the array is designed to ensure high data integrity and reliability. The insulation between the memory cells is effective in preventing data corruption due to cross-talk or other environmental influences.
The CY14B104NA-BA25I is a reliable, high-performance memory device that is suitable for a range of applications. It is low-power, fast and easy to use, and provides a reliable, secure solution for embedded applications. Its unique structure and design make it an excellent choice for designers wishing to achieve high performance and reliability in their designs.
The specific data is subject to PDF, and the above content is for reference
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