Allicdata Part #: | CY14B104NA-ZS45XI-ND |
Manufacturer Part#: |
CY14B104NA-ZS45XI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 4M PARALLEL 44TSOP II |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1... |
DataSheet: | CY14B104NA-ZS45XI Datasheet/PDF |
Quantity: | 625 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | CY14B104 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a very important element in the functioning of electronic systems and has important applications in many industries. The CY14B104NA-ZS45XI is an example of a type of memory which is currently being used in the market. This particular memory device is a 64K (65,536 bit) solid-state nonvolatile memory device, which is capable of storing data even when the power is turned off. It is a low-power CMOS memory device which is available in a variety of package options.
The CY14B104NA-ZS45XI is suitable for a variety of applications such as industrial control systems, home or business applications, toys, automotive, and consumer applications. In addition, because of its high performance, it is also suitable for use in mission-critical applications where data must be retained through power cycles or in the event of a power failure. In such applications, the CY14B104NA-ZS45XI can help to ensure that the data is safe and secure, as it can withstand temperature extremes, as well as ESD and electrical overstress conditions.
The CY14B104NA-ZS45XI features fast access times, low standby and active current consumption, and a high level of reliability. It also uses a special pin architecture and busing structure, which makes it easier to interface with other components and devices. This, in turn, increases the speed and performance of the system, and decreases the overall current consumption.
The CY14B104NA-ZS45XI uses a serial-access algorithm for clear and fast read/write cycles. It has an open-drain Data I/O which operates at a 3.3V input level. It also has an on-chip Write Protect pin, which allows the user to protect the data contained in the memory. The device also has an active high Chip Enable pin, which enables the device and the data-write process at low operating voltages, as low as 2.5V.
When operating, the CY14B104NA-ZS45XI uses a serial bus architecture. It consists of an address bus, a data bus, and a control bus. The address bus is used to provide the address of the desired memory location. The data bus is used to input the data to the memory, or to retrieve the data from the memory. The control bus is used to control the direction of the data flow. This means that the user can both read information from, and write information to, the memory.
The CY14B104NA-ZS45XI has a number of features which make it a good choice for many applications. These include its low current consumption, fast access times, and high level of reliability. In addition, it is also very simple to interface with other components and devices, and it is available in a variety of package options. As a result, the CY14B104NA-ZS45XI is a popular choice for many industries, and is currently being used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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