CY14B116K-ZS25XI Allicdata Electronics
Allicdata Part #:

CY14B116K-ZS25XI-ND

Manufacturer Part#:

CY14B116K-ZS25XI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 16M PARALLEL 44TSOP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 16Mb (2M x 8)...
DataSheet: CY14B116K-ZS25XI datasheetCY14B116K-ZS25XI Datasheet/PDF
Quantity: 74
Stock 74Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Mb (2M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Memory: CY14B116K-ZS25XI Application Field and Working Principle

Memory chips are widely used in computers, servers, and other automated equipment. That is why they are also known as semiconductor memory. CY14B116K-ZS25XI is a memory chip that is used in a variety of applications. It is a new type of memory chip which is used in dynamic random access memory (DRAM) circuits. The application field of CY14B116K-ZS25XI includes the storage and transfer of data, as well as providing a temporary storage space for programs and other user data.A cy14B116K-ZS25XI chip is made up of a single integrated circuit (IC) with a metal oxide semiconductor field-effect transistor (MOSFET). This type of memory chip is based on dynamic RAM, which has the ability to store data in a series of 1’s and 0’s. It can also be used to store and transfer data that is output by a computer or other machine input device.The working principle of the CY14B116K-ZS25XI chip is quite simple. It is a dynamic RAM (DRAM) chip with a MOSFET as the device material. The chip is constructed in a very specific way, with the chip components being arranged in a vertical series. A voltage is then applied to the ends of the series, allowing the charge to pass through the MOSFET. The electric field generated by the passing voltage causes the electrons to transfer from one state to another, thus making the operation of the chip possible.The memory of the CY14B116K-ZS25XI chip utilizes a data storage system called “page mode”. In page mode, data is stored in the form of words, with each word being 32 bits long. Each word is then divided further into eight sub-blocks of 4 bits. Each of these 4-bit blocks is assigned a specific address, allowing data to be recalled or written. Furthermore, each address can be set to retrieve or store a single word, multiple words, or even a full block of words.The main advantage of using CY14B116K-ZS25XI memory chips is that they can access data quickly and reliably. Their small size and low power consumption also make them suitable for use in battery-powered equipment. In terms of reliability, CY14B116K-ZS25XI chips are robust and can withstand higher temperatures and pressures than other types of DRAM chip.In addition to DRAM memory applications, CY14B116K-ZS25XI chips can also be used in various other applications including digital signal processors (DSPs), displays, camera systems, and aviation-related systems. This type of memory chip is also popular with gamers, who frequently use them in gaming consoles and other gaming hardware.In conclusion, CY14B116K-ZS25XI memory chips are an excellent choice for use in a wide range of applications, due to their fast access times, robust design, and low power consumption. Their use in DRAM memory is particularly beneficial due to their page-mode data storage system. With the increasing popularity of memory chips and the ever growing availability of new types of memory chips, such as CY14B116K-ZS25XI, it is likely that they are set to become a staple in the world of technology for many years to come.

The specific data is subject to PDF, and the above content is for reference

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