CY14B116N-BA25XIT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	60-TFBGA
Supplier Device Package:	60-FBGA (10x18)

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Introduction

CY14B116N-BA25XIT is a memory device from Cypress Semiconductor. It\'s a 128-bit non-volatile Static Random-Access Memory (SRAM). It is a non-volatile low power, fast data access memory device with high endurance and reliable storage.

Application Field

It is mainly used in embedded systems, industrial control, real-time storage and data analysis. CY14B116N-BA25XIT is applicable for customers who need data storage on any power-type system, that includes low-power battery-powered applications. This memory device can be used in applications where rapid retrieval of large amount of data is required, such as healthcare applications.

Working Principle

CY14B116N-BA25XIT is a low power 128-bit non-volatile static random access memory device. It’s a fast data-access memory device and suitable for reliable data storage. It has an operating frequency of 25MHz and it supports 2.5V to 3.6V of operating voltage. The device is divided into four 32-bit pages each with 4096 bit-locations. The data from the page can be retrieved with a single instruction, which allows the device to access 64 bytes of data in one clock cycle. A single cycle is required to write data to the device. The device is enabled with page erase and page write, which can erase and write 4 Kbit data in one operation. Moreover, the device has byte-wide write feature that allows byte-wide program instruction with non-volatile memory cell. It supports timeout feature to prevent from inadvertently erasing data. The device can provide a data-retention of 1 millisecond on any power-type system.

Conclusion

CY14B116N-BA25XIT is a low power, fast data access memory device and it is suitable for reliable storage. It is mainly used in embedded systems, industrial control, real-time storage and data analysis. With its rapid data recall capabilities, this device can be used in healthcare applications. Furthermore, it supports byte-wide program instructions with non-volatile memory cells and provides data-retention of 1 millisecond on any power-type system.

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