Allicdata Part #: | CY14B256LA-SZ25XI-ND |
Manufacturer Part#: |
CY14B256LA-SZ25XI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 256K PARALLEL 32SOIC |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | CY14B256LA-SZ25XI Datasheet/PDF |
Quantity: | 95 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 32-SOIC |
Base Part Number: | CY14*256 |
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The CY14B256LA-SZ25XI is a 2.5V asynchronous static RAM (SRAM) organized as 131,072 words by 8 bits. It is a low-power, high-performance CMOS 8-bit static RAM intended for demanding, high-reliability applications. It is fabricated with an advanced CMOS technology to achieve high-speed operation and low power consumption. This memory combines fast clock speeds, high density, low access and cycle times as well as low power dissipation.
The CY14B256LA-SZ25XI provides a wide variety of applications related to memory operations. It is suitable for memory intensive operations in embedded systems and microcontrollers, such as digital signal processing, multimedia playback, graphics, video and 3D acceleration, graphics-processing memory, video editing and HD video playback. This type of memory is also suitable for data logging applications, as well as digital and analog filtering functions. It allows for improved performance in high-end computing applications, including medical imaging, graphic processing, and computing clusters.
From a technical perspective, the CY14B256LA-SZ25XI is characterized by low noise operation, low signal delay and low quiescent current. This type of RAM enables higher clock speeds while reducing power dissipation. It also has an advanced write-protection circuit, which prevents inadvertent writing to the memory cells. Additionally, the memory provides high reliability, robustness and excellent thermal stability.
The working principle of the CY14B256LA-SZ25XI is based on static RAM. This type of RAM is a form of random-access memory (RAM) stored in integrated circuits. SRAMs are composed of registers and associated logic, which are used to store data. When power is applied, the data stored in the SRAM cells is initialized, and remains unchanged as long as power is maintained. The RAM cells are also able to store data even when power is lost, provided it is not taken out of the circuit.
The storage process in the CY14B256LA-SZ25XI is achieved by the use of flip-flops. Flip-flops are digital devices that store a single bit of information. The flip-flop allows the data stored in each cell to be written to, read from and updated as needed. Each cell may have one or more transistors, depending on the technology employed. As a result, SRAM can be accessed randomly, making it much faster than its equivalent dynamic RAM (DRAM).
The CY14B256LA-SZ25XI is an ideal solution for applications where higher performance, higher capacity, and low power are needed. The memory offers low-noise operation and low quiescent current, making it ideal for embedded applications such as digital signal processing applications and medical imaging. Its asynchronous design also gives it a speed advantage over synchronous RAM while providing ultimate in low power performance. The memory also provides reliable data storage, robustness and thermal stability, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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