![CY14E116L-ZS25XIT Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | CY14E116L-ZS25XIT-ND |
Manufacturer Part#: |
CY14E116L-ZS25XIT |
Price: | $ 35.81 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 16M PARALLEL 44TSOP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 16Mb (2M x 8)... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 32.54580 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 16Mb (2M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY14E116L-ZS25XIT is a memory device designed by Cypress Semiconductor Corporation. It is an asynchronous SDRAM device and is ideal for systems that require low cost and low power consumption. The CY14E116L-ZS25XIT is a 32Mbit DDR SDRAM with a 64MB bus configuration and operates at a maximum frequency of 200 MHz. The device has a 3.3V to 1.5V power supply, and its operating temperature range is -20ºC to +85ºC.
The CY14E116L-ZS25XIT is well suited for a range of applications including digital signal processing, embedded systems, embedded storage, and general purpose memory. The device is also highly flexible, and can easily be reconfigured to provide different types of data storage. For example, it can be used as an FIFO memory or as an SRAM device, depending on the application.
The CY14E116L-ZS25XIT uses a synchronous interface to access memory, with the memory controller providing the data required by the application. The device supports three different class types of access: single burst, sequential burst, and extended burst. The single burst operation provides access to one location in memory at a time, while the sequential burst and extended burst operations provide access to multiple locations.
The working principle of the CY14E116L-ZS25XIT is based on the concept of external memory. The device uses an external memory controller to interface with external DDR SDRAM memory. The memory controller handles the movement of data from the external DDR SDRAM memory to the processor. The data transfer is achieved through the use of an internal bus which is connected to the memory controller and the processor. The data is then transferred to the processor and the memory controller processes the data accordingly.
The CY14E116L-ZS25XIT also supports error correction and data scrubbing. Error correction is a process that allows the memory controller to detect and correct any errors that occur during data transfer. Data scrubbing is a process that allows the memory controller to replace any problem data with a predetermined value. Both of these processes ensure the integrity of the data stored in the memory.
The CY14E116L-ZS25XIT is the perfect device for a range of applications that require low cost and low power consumption. It is an ideal choice for embedded systems, digital signal processing, and general purpose memory applications. The device provides fast, reliable access to memory with a high degree of flexibility. The device also provides error correction and data scrubbing capability to ensure the integrity of data stored in memory.
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