CY14ME064Q1B-SXIT Allicdata Electronics
Allicdata Part #:

CY14ME064Q1B-SXIT-ND

Manufacturer Part#:

CY14ME064Q1B-SXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 64K SPI 40MHZ 8SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8)...
DataSheet: CY14ME064Q1B-SXIT datasheetCY14ME064Q1B-SXIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: CY14ME064
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the ever evolving and changing field of technology, memory is one of the most important components. Memory plays a vital role in the functioning of almost all devices, ranging from computers and smartphones to automobiles and aircrafts. The CY14ME064Q1B-SXIT is a memory device developed by Cypress Semiconductor that is used in a wide range of applications.

The CY14ME064Q1B-SXIT is a 4Mb double data rate synchronous DRAM, a type of dynamic RAM commonly used in computer devices. It is a Synchronous device, which means that it is synchronized to a clock signal from an external source and is hence able to provide balanced performance. It has many features and benefits, including fast I/O access, low power, fast refresh, and wide temperature range.

The CY14ME064Q1B-SXIT can be used in almost any memory application, and is ideally suited for those that require large storage capacity such as gaming and graphics applications, networking and networking storage applications, and large database applications. Its wide temperature range also means it can be used in applications that require extreme environmental conditions.

The CY14ME064Q1B-SXIT works by storing data in an array of capacitors. Data is stored in the form of electrical charges and these charges are maintained in the array of capacitors. The array decouples the DRAM cell from the I/O lines, so that data is retained even when the memory is not in use. To access the data stored in the array, the Address Decoder circuit is used to decode the address information while the sense amplifier circuit amplifies the signal.

Once the address is decoded and the signal is amplified, the DRAM cell is read and the data is sent to the output buffer which then sends it to the desired device or application. This process happens in a matter of nanoseconds, making the CY14ME064Q1B-SXIT one of the fastest memory devices available. The device also features an auto-refresh feature that helps keep data stored for a longer period of time.

In summary, the CY14ME064Q1B-SXIT is a powerful and reliable memory device that is used in a wide range of applications. It is a Synchronous DRAM that can store and retrieve data in a matter of nanoseconds, and it also has a built-in auto-refresh function that keeps data stored for a longer period of time. With its wide temperature range, this device is ideal for extreme environmental applications, making it one of the most versatile memory devices available on the market today. Thus, it is a great choice for memory applications ranging from gaming and graphics applications to networking and large databases.

The specific data is subject to PDF, and the above content is for reference

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