Allicdata Part #: | CY14V104LA-BA25XI-ND |
Manufacturer Part#: |
CY14V104LA-BA25XI |
Price: | $ 16.98 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 4M PARALLEL 48FBGA |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8... |
DataSheet: | CY14V104LA-BA25XI Datasheet/PDF |
Quantity: | 1000 |
299 +: | $ 15.42640 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA |
Supplier Device Package: | 48-FBGA (6x10) |
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Memory is one of the most important components of any computer. It is used to store data, instructions, and results of computations, which are then accessed and used by the processor. There are many types of memory, ranging from SRAM and DRAM, to flash memory and magnetic memory. One of the most popular types of memory is the CY14V104LA-BA25XI, which is an asynchronous static random access memory (SRAM).
The CY14V104LA-BA25XI is a low power and high speed SRAM device which is built from three components – a control logic circuit, an address decoding circuit, and a data array. It was developed to meet the requirements of high-speed and high-density applications, such as embedded systems, telecommunications, and data storage. The CY14V104LA-BA25XI has a power dissipation of 0.45 W and a maximum operating temperature of 85°C. It also has a wide industrial temperature range, from -55C to +85C, meaning it can be used in extreme temperatures. Furthermore, the CY14V104LA-BA25XI is non-volatile and utilizes three-state output buffers.
The CY14V104LA-BA25XI is used in a variety of applications, from embedded systems, to telecommunications, data storage, and other similar applications that require fast access to data. Its asynchronous operation allows for higher speeds in certain applications, as the data is available on the I/O pins in the same clock cycle. Its low power consumption makes it ideal for applications that require a high degree of power efficiency. Additionally, the device is non-volatile, meaning it retains the data even when power is removed or the system is reset.
The working principle of the CY14V104LA-BA25XI is based on the number of memory cells and its structure. Each memory cell is a static latch, which is composed of four transistors. The control logic contains the necessary logic to control the operations, while the address decoding circuit allows the device to access data from its memory array. The data array is composed of memory cells, which store bits of information. The address bus provides the memory cells with the necessary address and the data bus is used to read and write data to the memory. When the device receives a read or write cycle, the data is transferred between the memory and the device. This is done by the control logic, which controls the operation of the device.
The CY14V104LA-BA25XI is a highly efficient, low power static random access memory device which is well suited for applications that require a high degree of power efficiency and fast access to data. It is also used in many types of embedded systems and data storage applications. Its advantages include its low power consumption, its wide industrial temperature range, its non-volatile memory cells, and its asynchronous operation. With its wide range of applications and its efficient performance, the CY14V104LA-BA25XI has become a popular choice for many types of memory devices.
The specific data is subject to PDF, and the above content is for reference
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