| Allicdata Part #: | CZRA5951B-G-ND |
| Manufacturer Part#: |
CZRA5951B-G |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Comchip Technology |
| Short Description: | DIODE ZENER 120V 1.5W DO214AC |
| More Detail: | Zener Diode 120V 1.5W ±5% Surface Mount DO-214AC (... |
| DataSheet: | CZRA5951B-G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.07778 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 120V |
| Tolerance: | ±5% |
| Power - Max: | 1.5W |
| Impedance (Max) (Zzt): | 380 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 91.2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -55°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
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The CZRA5951B-G is a single surface mountable Zener diode with a high power dissipation of 500mW. It is used in various applications such as; switching and regulating power supplies, manipulating current in AC circuits, and protecting sensitive devices from transients. The CZRA5951B-G is designed to have a reverse voltage (VZ) of 5.6V, a nominal forward current (IF) of 250mA, and a reverse current of 25μA at a temperature of 25°C.
The CZRA5951B-G operates by relying on a Zener breakdown effect. When the device is connected in a circuit, the current passes through it in one direction, and a voltage is developed across it due to the Zener Breakdown effect. The breakdown voltage VZ lies between the opposite terminals of the diode. This is because of the progressive increase in the electric field with the increasing reverse bias voltage. When this electron field reaches a specific value, the reverse breakdown voltage appears. This voltage is known as the Zener voltage, and it is maintained even after the removal of the reverse bias voltage. The Zener voltage of a Zener diode required for its operation is chosen with respect to the application.
The CZRA5951B-G has many advantages, such as a low leakage current ideal for protecting sensitive circuits, low thermal impedance, excellent surge handling capabilities, and is a cost effective solution. The CZRA5951B-G is constructed using a silicon layer, and is designed with a 1.2A peak pulse forward current. It is widely used in various electronic devices, such as; voltage regulators, power supplies, and controllers.
The CZRA5951B-G can be used in many applications due to its low reverse leakage current and its high power handling capabilities. It is also used for mitigating voltage transients and for powering up high current applications. It is ideal for use as a surge protection device, as it can survive extreme peak power surges, and is also capable of providing protection against electrostatic discharge (ESD) spikes. It is also used in many automotive systems, such as sensors and LED lighting, to ensure that the system is capable of handling high surges of current in a safe and reliable manner.
In conclusion, the CZRA5951B-G is a single surface mountable Zener diode with a high power dissipation of 500mW. It is designed with a reverse voltage (VZ) of 5.6V, a nominal forward current (IF) of 250mA, and a reverse current of 25μA at a temperature of 25°C. It has many advantages, such as; a low leakage current ideal for protecting sensitive circuits, low thermal impedance, excellent surge handling capabilities, and is a cost effective solution. Due to these advantages, the CZRA5951B-G is widely used in various electronic applications, including; voltage regulators, power supplies, controllers, Surge protectors, and many automotive systems.
The specific data is subject to PDF, and the above content is for reference
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CZRA5951B-G Datasheet/PDF