CZRF10VB-HF Allicdata Electronics
Allicdata Part #:

CZRF10VB-HF-ND

Manufacturer Part#:

CZRF10VB-HF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE ZENER 10V 200MW 1005
More Detail: Zener Diode 10V 200mW ±3% Surface Mount 1005/SOD-3...
DataSheet: CZRF10VB-HF datasheetCZRF10VB-HF Datasheet/PDF
Quantity: 1000
4000 +: $ 0.03673
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±3%
Power - Max: 200mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Description

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CZRF10VB-HF Application Field and Working Principle

CZRF10VB-HF diodes are widely used in high frequency circuit and many kinds of high frequency applications, such as radio frequency (RF) receivers, RF power amplifiers, RF remote control systems, RF detectors and many other applications.

The CZRF10VB-HF is a specific type of semiconductor diode which mainly used in the local oscillator of radio frequency amplifier. It works in two directions: forward switch and backward diode. The forward switch has a large current gain when compared to the backward diode. This allows the diode to handle large flows of current in its forward direction.

The CZRF10VB-HF diode relies mainly on the Zener breakdown principle for its operation. This specifically means that the electric field in the junction of the diode is high enough to ionize the molecules, creating a low-resistance path for the current.

Once this happens, the current will then pass through the diode, creating a voltage drop and a very small power dissipation. This is mainly due to the fact that the current is passing through a low resistance region.

The low-power dissipation of the CZRF10VB-HF diode allows it to be safely used in a variety of applications, such as radio frequency (RF) receivers, RF power amplifiers, RF remote control systems, RF detectors and many other applications.

In terms of its construction, the CZRF10VB-HF diode features an anode, a cathode, and a reverse junction, which is usually located between the anode and the cathode. This reverse junction is mainly responsible for the operation of the device. This is because it creates a high-resistivity barrier, allowing the current to pass through it when a voltage is applied across it.

When a voltage is applied to the reverse junction, it causes the creates a reverse-bias or inverse-bias between the anode and the cathode. This is called “Zener breakdown,” and it is the mechanism through which the CZRF10VB-HF Diode operates.

The CZRF10VB-HF diode also operates at high frequencies as well as at low frequencies, making it a very versatile device. As mentioned earlier, it is mainly used in radio frequency applications. It has been found to have a very low forward resistance, which makes it ideal for the conversion of the signals inside the local oscillator of the RF system.

In conclusion, the CZRF10VB-HF diode is an excellent device which is used for many high frequency applications, such as radio frequency receivers, RF power amplifiers, and many other applications. Its operation relies on the Zener breakdown principle, which allows it to handle large currents in its forward direction, while keeping its reverse resistance very low.

The specific data is subject to PDF, and the above content is for reference

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