CZRFR52C13 Allicdata Electronics
Allicdata Part #:

CZRFR52C13-ND

Manufacturer Part#:

CZRFR52C13

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE ZENER 13V 200MW 1005
More Detail: Zener Diode 13V 200mW ±5% Surface Mount 1005/SOD-3...
DataSheet: CZRFR52C13 datasheetCZRFR52C13 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04631
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 13V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 10V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Description

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CZRFR52C13 application field and working principle

Introduction

The CZRFR52C13 Zener Diode is a versatile device with a wide range of applications and unique characteristics. This versatile device can be found in a variety of places but it is most commonly used in residential and commercial power supplies, integrated power systems, and other devices.

Construction and Design

The CZRFR52C13 is a single, larger form factor diode. It\'s a two terminal device with a reverse breakdown voltage and dynamic resistance. The body of the diode is made with an extremely strong reflective material to ensure the insulation against electric shock. The junction is designed to withstand large temperature and current. The substrate of the diode is metallic to further protect the device.

Electrical Characteristics

The CZRFR52C13 is a higher power diode with lower dynamic resistance than other diode types. It has a breakdown voltage of 5.2V and a dynamic resistance of 0.13 Ohm. The rated power of the device is 20 watts. The current rating is dependant on the external heatsink provided. The power capability is determined by the applied external current.

Working Principle

The working principle of the CZRFR52C13 is based on the PN junction diode. The device is formed from two layers of differently doped silicon. When direct current flows through the diode, electrons from the negative side flow from the P side to the N side, creating a PN layer. Depending on the current, the intensity of the PN layer will be different now, a potential will be created that opposes the current, causing a breakdown voltage.

Applications

The CZRFR52C13 Zener Diode is a versatile device with many applications. Its low dynamic resistance make it ideal for precision power regulation. In addition, its high power capability makes it suitable for controlling high current in residential and commercial power supplies, integrated power systems, and other applications. The diode can also be used to protect sensitive components from voltage spikes.

Conclusion

The CZRFR52C13 Zener Diode is a unique device with a wide range of applications. Its low dynamic resistance and high power capability make it ideal for controlling power in sensitive devices. Its robust construction allows it to withstand high temperature and current. The CZRFR52C13 is sure to be an invaluable device in future technological advancement.

The specific data is subject to PDF, and the above content is for reference

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