CZRNC55C3V3-G Allicdata Electronics
Allicdata Part #:

CZRNC55C3V3-G-ND

Manufacturer Part#:

CZRNC55C3V3-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE ZENER 3.3V 500MW 1206
More Detail: Zener Diode 3.3V 500mW ±5% Surface Mount 1206
DataSheet: CZRNC55C3V3-G datasheetCZRNC55C3V3-G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 85 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 1206
Description

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Diodes - Zener - Single include a variety of devices used in a wide range of applications, with CZRNC55C3V3-G being one of them. This device helps regulate voltage and current levels by allowing a specified high-voltage current to flow in one directionin electronic circuits. When in use, it acts as a voltage regulator, rectifier or other components in the circuit. It can be used as an amplifier in power supply applications, as well as a surge suppressor in power supply circuits.

The CZRNC55C3V3-G is a 3.3 V, 5.5 W, silicon epitaxial planar zener diode. It comes in a tiny and sizeable SOT-23 package and is designed to provide a high-level voltage and current regulation. The device has a maximum reverse voltage of 3.3 V and a maximum forward current of 5.5 W. It has a rated maximum power dissipation of 15 mW and an operating temperature range of -65 to 150 degrees Celsius. In addition, the device\'s ESD protection is 4 kV.

The working principle of the CZRNC55C3V3-G is that when the reverse voltage is greater than the breakdown voltage of the diode, a large current will flow through the diode and a voltage drop will be produced across the anode and cathode terminals. This voltage drop will regulate the current flow through the diode and provide a constant voltage across the terminals. The power dissipation of the diode will increase with the increase in forward current and the reduction in temperature, while the power dissipation will decrease with the increase in reverse voltage.

The CZRNC55C3V3-G has a wide variety of applications, making it perfect for use in a variety of systems. It is widely used as a voltage regulator, rectifier, and amplifier in power supply applications. Its high power dissipation and temperature range make it suitable for applications in telecommunication systems and computer peripherals, while its ESD rating makes it suitable for data storage and high frequency applications. Additionally, its miniature size makes it ideal for use in portable devices.

In conclusion, the CZRNC55C3V3-G is an efficient and reliable device that is suitable for various applications. It is a silicon epitaxial planar zener diode that comes in a tiny SOT-23 package. It has a maximum reverse voltage of 3.3 V and a maximum forward current of 5.5 W, as well as a rated maximum power dissipation of 15 mW and an operating temperature range of -65 to 150 degrees Celsius. The working principle is based on the breakdown voltage of the diode, allowing a large current to flow and a voltage drop across its terminals. Lastly, the CZRNC55C3V3-G is widely used as a voltage regulator, rectifier, amplifier, surge suppressor, and power supply in a variety of systems, making it a versatile and widely used device.

The specific data is subject to PDF, and the above content is for reference

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