Allicdata Part #: | CZRV5230B-G-ND |
Manufacturer Part#: |
CZRV5230B-G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE ZENER 4.7V 200MW SOD323 |
More Detail: | Zener Diode 4.7V 200mW ±5% Surface Mount SOD-323 |
DataSheet: | CZRV5230B-G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03423 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.7V |
Tolerance: | ±5% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 19 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -60°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
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The CZRV5230B-G is a single Zener diode unit, typically used in many applications requiring voltage limiting and voltage regulation. This diode has a low series resistance and a High Surge capability, making it suitable for rectifier, voltage regulator, and other applications.
In its basic form, the CZRV5230B-G is a single Zener diode unit. It is often used in applications that require a voltage regulation and voltage limiting to protect sensitive components from accidental voltage overshoot. By placing this device in series with a standard diode, a noncombatant circuit or load can be protected from voltage up surges. Some techniques may also be used to obtain a suitable voltage range for particular applications.
This device is comprised of a semiconductor material, either silicon or germanium, with a n-type layer and a p-type layer. In the context of the CZRV5230B-G, this material is typically gallium arsenide, a compound semiconductor material. The active regions of the Zener diode unit lie between the n-type and p-type regions. The p-type and n-type layers form the anode and the cathode respectively.
The CZRV5230B-G can be used in a variety of application fields. It is typically used as a voltage regulator and voltage limiter in circuits and devices that require this type of protection. It is also used for rectification purposes and in high power applications. In addition, the device is ideal for power supplies, line regulation, load regulation, and other related applications.
The working principle of the CZRV5230B-G Zener diode is based on the Zener diode breakdown voltage. When the voltage across the diode reaches the Zener voltage (also known as the breakdown voltage), the current applied to the diode increases dramatically. This increase in current causes the diode to conduct, allowing it to limit the maximum voltage across the circuit.
Having a low series resistance, the CZRV5230B-G is well suited for applications in which current is transferred from one node to another. It is also advantageous in applications involving high power dissipation and high surge capability requirements. It is relatively easy to implement in a variety of circuit designs, as the device requires a simple circuit configuration to operate.
In conclusion, the CZRV5230B-G is a single Zener diode unit, typically used for voltage regulation, voltage limiting, and rectification purposes. This device is comprised of a semiconductor material which contains an anode, a cathode, and an active region. It has a low series resistance and a high surge capability, making it suitable for many applications. This device is easy to implement in many circuit designs and solutions.
The specific data is subject to PDF, and the above content is for reference
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