Allicdata Part #: | CZRW5227B-G-ND |
Manufacturer Part#: |
CZRW5227B-G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE ZENER 3.6V 350MW SOD123 |
More Detail: | Zener Diode 3.6V 350mW ±5% Surface Mount SOD-123 |
DataSheet: | CZRW5227B-G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02739 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.6V |
Tolerance: | ±5% |
Power - Max: | 350mW |
Impedance (Max) (Zzt): | 24 Ohms |
Current - Reverse Leakage @ Vr: | 15µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
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Zener diodes are a type of semiconductor, and the CZRW5227B-G is a unique example of this technology. The CZRW5227B-G is a low-noise and low-resistance single zener diode manufactured by Vishay Semiconductor. It has an operating temperature range of –65°C to +145°C, a maximum power dissipation of 500 mW, and a maximum junction temperature of 125°C. It is packaged in a DO-35 (SOT-223) package.
The application field of the CZRW5227B-G is mainly for use in generator protection and manufacture of radio interference suppression circuits. The CZRW5227B-G is designed to meet many different requirements for a variety of power and temperature conditions. Zener diode does not have forward volt–ampere characteristics. It has a reverse transition from the break-down voltage, which occurs when the voltage applied to it exceeds the break-down voltage.
The working principle of the CZRW5227B-G is based on the zener-effect. When a zener diode is used in reverse-biased mode, it allows current to flow in the reverse direction. This current flow is due to the zener breakdown effect, which is triggered when the applied voltage exceeds the zener breakdown voltage. The CZRW5227B-G is designed to allow current to flow in the reverse direction when the voltage exceeds the zener breakdown voltage.
The CZRW5227B-G is ideal for generator protection and radio interference suppression circuits. The device operates in a low-noise, low-resistance environment, making it an ideal component for use in these applications. In addition, the device is designed to withstand a variety of power and temperature conditions. These features make it an ideal component for use in many different applications.
In conclusion, the CZRW5227B-G is a single zener diode manufactured by Vishay Semiconductor that is designed for use in generator protection and radio interference suppression circuits. The device operates in a low-noise, low-resistance environment, making it ideal for these applications. The device has an operating temperature range of –65°C to +145°C, a maximum power dissipation of 500 mW, and a maximum junction temperature of 125°C. It is packaged in a DO-35 (SOT-223) package, making it an easy to use component. The working principle of the CZRW5227B-G is based on the zener-effect and the zener breakdown voltage. This allows current to flow in the reverse direction when the voltage applied to it exceeds the zener breakdown voltage. These features make the CZRW5227B-G an ideal component for use in many different application fields.
The specific data is subject to PDF, and the above content is for reference
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