CZT5551 TR Allicdata Electronics
Allicdata Part #:

CZT5551TR-ND

Manufacturer Part#:

CZT5551 TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 180V 0.6A SOT223
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 2W ...
DataSheet: CZT5551 TR datasheetCZT5551 TR Datasheet/PDF
Quantity: 7000
Stock 7000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 2W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

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The CZT5551 TR is a high-performance single bipolar junction transistor (BJT) with a wide range of applications and a variety of working principles. Specifically, the CZT5551 TR is designed to be a general-purpose transistor with a balance between low power consumption and high voltage operation. This makes it suitable for a variety of power electronics applications, including power supplies, lighting, motor control, portable electronics, automotive systems, and more.

The CZT5551 TR has a maximum collector current rating of 100mA, and a maximum base current rating of 50mA, with a maximum collectors-emitters voltage (VCE) rating of 50V. It also features a wide range of tolerance packages, ranging from TO-92, SOT23 and SOT89 packages, to tiny 1mmx1mm SC59, SOT353 and SC70 packages, meaning that design engineers have a great deal of flexibility of choice with regard to optimizing their application design. This is further enhanced by the fact that the CZT5551 TR supports the use of a variety of DC and AC circuit operating conditions.

At the heart of the CZT5551 TR is a single BJT, which consists of two diodes connected and combined into a structure. This arrangement gives the CZT5551 TR the capability to perform a wide range of switching operations due to its ability to control current flow. The BJT is divided into three distinct regions, which are known as the emitter, base, and collector. The BJT is then biased with a DC voltage, and the current flow is controlled by the base-emitter voltage, which is a function of the DC voltage applied. When the base-emitter voltage exceeds the threshold voltage, the base current increases, which in turn increases the collector current.

The CZT5551 TR has a wide range of possible operating states and configurations, with two primary modes of operation being forward active mode and saturation mode. In forward active mode, the BJT operates under a period of low current, and the output voltage is slightly less than the input voltage. In saturation mode, the BJT is biased to run with a relatively high collector current, and the output voltage is higher than the input voltage. This is due to the formation of a region of avalanche breakdown, which causes the base-emitter voltage to drop, resulting in a substantial increase in collector current.

The CZT5551 TR is a powerful and versatile tool for a wide range of power electronics applications, thanks to its robust build, wide tolerance packages, and wide range of operating states. Its most common application is as a switch, where it is used to control the flow of current from the input to the output. This makes it suitable for a variety of switching operations, including on-off, pulse modulation, and closed-loop feedback control applications. It is also often used as a transistor amplifier, where its wide range of applications makes it ideal for a variety of power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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