D1461S45TXPSA2

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The D1461S45TXPSA2 diode is a single rectifier designed for use in a variety of applications. It is a medium current, high operating temperature, surface mount diode. This diode is designed for reliable use in a variety of high-frequency, low-power applications, such as power converters, charging systems and consumer appliances.

The D1461S45TXPSA2 is a low-voltage, low-temperature single rectifier that is capable of controlling alternating current with a maximum voltage rating of 45 V and a nominal current rating of 25 A. The diode can withstand very high surge current, up to 100 A peak, and is rated to operate in medium operating temperature applications up to 150°C.

The diode has a low forward voltage drop, eliminating the need for external series resistance. The low switching and conduction losses reduce the overall power consumption, making the device suitable for high-frequency applications. It is also designed to reduce EMI and has a low on-state voltage, as well as a low capacitance, making it suitable for low-power applications.

The D1461S45TXPSA2 is constructed of a silicon body, top metallization, a gold overcoat layer and a nickel barrier layer, to provide excellent heat dissipation and good long-term reliability. The diode is available with a maximum reverse recover time of 17 ns for fast switching.

The D1461S45TXPSA2 is designed for a wide range of applications, including flyback converters, synchronous rectification, unidirectional current blocking, switching circuits and power supplies. The diode is ideal for high-frequency applications because of its low forward voltage drop and low capacitance. It is also suitable for high power applications due to its low switching and conduction losses and high surge current capability.

The working principle of the D1461S45TXPSA2 diode is based on its structure. When the forward bias voltage is applied, electrons are triggered by the built-in electric field at the junction, and then pass through the P-type barrier layer, which provides a low resistance path between the anode and cathode.

When the bias voltage is removed, the electrons are prevented from returning to the anode because the potential barrier created by the PN junction has a higher forward bias. The electrons are pushed away from the junction and back to the cathode, which results in current flowing in the reverse direction.

The D1461S45TXPSA2 diode is a reliable, low-cost and high-performance device for a wide range of applications. It is designed for reliable use in a variety of high-frequency, low-power applications and can withstand very high surge current, making it suitable for high power applications.

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