D1721NH90TAOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

D1721NH90TAOSA1 Application Field and Working Principle

Among the vast selection of solutions offered by NXP Semiconductors, a leading provider of semiconductor solutions, the D1721NH90TAOSA1 is notable for its appealing features and performance. Classified as part of the Diodes - Rectifiers - Single product family, the D1721NH90TAOSA1 utilizes advanced technology to ensure its functionality.

The D1721NH90TAOSA1 is classified according to its capabilities and performance. As a Rectifier - Single, it provides isolated protection from reverse currents, short-circuit protection, over-voltage protection, and power dissipation.

Overview of the D1721NH90TAOSA1

The D1721NH90TAOSA1 is a silicon die-mounted Rectifier - Single with a 900V breakdown voltage, 0.875A forward current, and 1.08A maximum reverse leakage current.

The D1721NH90TAOSA1 is equipped with a a low-inductance terminations, and features an isolated submount base which helps reduce thermal resistance. Its optimized EMC performance ensures a high level of immunity against electromagnetic interference.

Applications of the D1721NH90TAOSA1

The most common application of the D1721NH90TAOSA1 is in appliances and consumer electronics, such as in television receivers, DVD players, and other consumer devices. It is also suitable for use in computers and internet-based devices, where high speed data transmission is key. Additionally, the D1721NH90TAOSA1 is used for protection against voltage transients and unstable voltage supplies.

The D1721NH90TAOSA1 can also be used in industrial settings such as communication networks, smart energy systems, climate control systems, and many more. Its advantages include fast switching speeds and reliable surge protection.

Working Principle of the D1721NH90TAOSA1

The D1721NH90TAOSA1 works through a principle called avalanche breakdown, which is based on the fact that when a sufficiently large electric field is applied to a reverse-biased diode, the diode breaks down and creates a large number of electron-hole pairs, producing a current.

The breakdown voltage of the D1721NH90TAOSA1 is determined by its p-n junction. When the applied voltage is increased above the breakdown voltage, the avalanche current is created and the voltage level drops along the junction.

The avalanche process is quick and requires extremely small amounts of energy. This makes the D1721NH90TAOSA1 suitable for high-speed data transmission applications. Additionally, the D1721NH90TAOSA1 is able to operate at high temperatures and provides protection against voltage transients and unstable voltage supplies.

Conclusion

The D1721NH90TAOSA1 is a reliable and efficient Rectifier - Single solution that provides protection against reverse currents, short-circuits, over-voltage, and power dissipation. Its high breakdown voltage, low-inductance terminations, and optimized EMC performance make it suitable for use in a variety of applications, from consumer electronics to industrial settings. Its working principle provides fast switching speeds and reliable surge protection.

The specific data is subject to PDF, and the above content is for reference