Allicdata Part #: | D2601NH90TXPSA1-ND |
Manufacturer Part#: |
D2601NH90TXPSA1 |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 9KV 1790A |
More Detail: | Diode Standard 9000V 1790A Chassis Mount |
DataSheet: | D2601NH90TXPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.63000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 9000V |
Current - Average Rectified (Io): | 1790A |
Voltage - Forward (Vf) (Max) @ If: | 5.5V @ 4000A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 150mA @ 9000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AE |
Supplier Device Package: | -- |
Operating Temperature - Junction: | 0°C ~ 140°C |
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.D2601NH90TXPSA1 Application Field and Working Principle
D2601NH90TXPSA1 belongs to the category of diodes - Rectifiers - Single. It is a kind of diode designed to allow current flow in one direction only, from the anode to the cathode. The standard applications of this diode are in power rectification, and protecting circuits from over-voltage surges, or for converting alternating current (AC) to direct current (DC).
Working Principle of D2601NH90TXPSA1 :
The work principle of this diode is based on their purest physical operation, the P-N junction barrier. This P-N junction is formed by joining N-type dope material , which is doped with donor atoms with P-type dope material which is doped with acceptor atoms to form the junction. The N-type material carries donor electrons while the P-type material carries acceptor ion vacancies known as holes. When a voltage is applied to the junction in the forward bias direction, the electrons and holes are drawn to them and an electric current, known as electron-hole recombination current, flows through the junction of the P-N junction. Due to this current, the threshold voltage is reached and the diode switches from a non-conductive to a conductive state. The resistance of the diode at the moment of switching is very low, which increases at a later stage, due to decrease in current. This ensures a perfect rectifying effect to the power supplies.
Advantages of D2601NH90TXPSA1 :
Without consuming too much power, D2601NH90TXPSA1 provides excellent electronic protection, by allowing current only in one direction. It prevents circuit overloads and other damages. The diode also filters out noises, spikes and other disruptive electromagnetic impulses.
The forward voltage drop of this diode is low, which helps in minimizing power dissipation and enhances the efficiency of the rectification process. The positive temperature coefficient also adds another level of safety as it provides extra protection to the electronic circuit, by increasing the dynamic resistance of the diode at high temperatures.
Applications of D2601NH90TXPSA1 :
D2601NH90TXPSA1 is a highly reliable diode, that can handle large current surges without getting damaged. This makes it an essential element for many power conversion applications. Examples of its applications include AC-DC power converters, SMPS efficiency enhancement, DC-DC converters, voltage multipliers, induction heating, and other high power switching applications.
The diode can also be used in high speed switching, in which it can replace high power transistors switching, due to its ultrafast recovery time. The diode also finds its storage in communications, automotive and solar energy applications.
Conclusion :
D2601NH90TXPSA1 is an essential part of any power conversion or high power switching system. It is a reliable, safe and efficient device that allows current only in one direction, and protects the circuits from getting damaged by overloads. The low drop voltage and the positive temperature coefficient helps in minimizing power dissipation and enhancing the system efficiency.
The specific data is subject to PDF, and the above content is for reference
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