D3001N60T

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	6000V
Current - Average Rectified (Io):	3910A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 4000A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	100mA @ 6000V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis Mount
Package / Case:	DO-200AE
Supplier Device Package:	--
Operating Temperature - Junction:	-40°C ~ 160°C

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IntroductionThe D3001N60T is a high-efficiency HV silicon rectifier diode. It is a low-cost component and is suitable for high-current, high-voltage applications. The D3001N60T is designed for use in a wide range of applications such as AC-DC power supplies, industrial, automotive, and consumer products.Device ConstructionThe D3001N60T is a single phase diode rectifier. It has high capacitance, low leakage, and excellent high junction temperature stability. The device is constructed from an N-type silicon substrate, with a polysilicon gate, a P-type guardring and a N-type epitaxial layer. The top contact metallization consists of an AlN/TiN/Mo polysilicon layer to ensure good contact and low contact resistance.Electrical CharacteristicsThe D3001N60T can operate in the range of 35V to 60V, with a reverse recovery time (trr) of 3.2μs and a maximum forward voltage of 6V. The device has an RDSon of 1.5 ohms and a maximum rated current of 2.75amp. Additionally, it has a low thermal resistance of 3.2℃/W. Application Field and Working PrincipleThe D3001N60T can be used in a wide range of applications from consumer to industrial. It can be used in applications such as AC-DC power supplies, uninterruptible power supplies, automotive, telecommunication power supplies and commercial power supplies.In operation, the D3001N60T works as a rectifier bridge. When there is an input voltage applied to the cathode, electrons flow into the oxide layer at the anode and become a negatively charged electron depleted region. At the same time, the gate voltage controls the current flow between the gate and drain terminal, controlling the flow of electrons in both directions. When forward biased, the current flows through the diode, allowing the anode to become increasingly negative as the reverse unbiased diode blocks current from flowing in the opposite direction. ConclusionThe D3001N60T is a single phase high voltage silicon rectifier diode designed for a wide range of high-current, high-voltage applications. It is capable of operating in the range of 35V to 60V and has a maximum forward voltage of 6V. Additionally, it has a low RDSon of 1.5ohms and a maximum rated current of 2.75amp. Furthermore, it has a low thermal resistance of 3.2℃/W, ensuring improved device reliability and efficient operation. The D3001N60T is suitable for applications such as AC-DC power supplies, uninterruptible power supplies, automotive, telecommunication power supplies and commercial power supplies.

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