Allicdata Part #: | D44VH10GOS-ND |
Manufacturer Part#: |
D44VH10G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 15A TO220AB |
More Detail: | Bipolar (BJT) Transistor NPN 80V 15A 50MHz 83W Thr... |
DataSheet: | D44VH10G Datasheet/PDF |
Quantity: | 1445 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 400mA, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 1V |
Power - Max: | 83W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The D44VH10G is a high-power, low-noise general-purpose NPN silicon NPN transistor designed to work well with multiple applications. It is a device that operates using two junction points to trigger the transistor that carries a current. Because it is a single bipolar type, it operates with a single base and uses two emitters. This provides a larger output current, so that it can handle a greater amount of power.
This type of transistor has multiple characteristics that make it advantageous for a number of applications. For example, its power density is greater than most, meaning it has better efficiency. Additionally, since it operates with a single base, this means it dissipates less power than other types. As such, it can be used in circuits that require a low level of power consumption, such as low-powered computer systems or embedded controllers.
The D44VH10G also features a range of different electrical characteristics. This includes low leakage current and a high start voltage. Additionally, its gain is low and its cutoff frequency is high, making it suitable for operating at high speeds. This means it can be used in applications that require quick data processing, such as in radio frequency systems.
The working principle of this type of semiconductor is based on bipolar junction transistors (BJTs). This means that it works with two junctions: a base and an emitter. The base is the layer of a semiconductor material between the metal contact of the transistor and the emitter, which is the point where the current flows. The base is negatively charged, allowing the voltage to flow from the n-type source, through the base, and to the p-type source.
When the base and the emitter are connected to the power source, a current will flow. The voltage across the base and the emitter will be reversed, and the flow of current will increase or decrease depending on the voltage applied. This is known as the voltage transfer characteristic (VTC). The current will continue to flow until the voltage between the base and the emitter has been reverse. Once the VTC is exceeded, the transistor will shut off.
The D44VH10G is a powerful and efficient transistor that is suitable for a range of applications, including radio frequency systems, low-powered computer systems, and embedded controllers. It features a range of desirable electrical characteristics, such as low leakage current and a high start voltage. Additionally, it operates on a singlebase and is therefore able to dissipate less power, making it an ideal choice for applications that require low power consumption.
The specific data is subject to PDF, and the above content is for reference
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