D45H11 Discrete Semiconductor Products

The D45H11 is a general-purpose single discrete NPN transistor that is commonly used in switching and amplification applications. It is considered to be a low-power device and hence is often used in applications such as logic gates, where low current operation is advantageous. The D45H11 is also well suited for powering audio amplifiers and other power circuits due to its high current ratings.

The D45H11 is a two-terminal device consisting of a base and a collector. When a current is passed through the base terminal, electrons are released or holes are created, depending on the polarity of the voltage applied. These electrons/holes move from the base to the collector via the semiconductor material, commonly silicon. Since the semiconductor material has a high resistance, the current from the base to the collector is limited and the collector current is proportional to the base current.

The transistor’s gain, also known as the hFE, is the ratio between the collector current to the base current. The higher the hFE, the greater the gain, and the more amplification that can be provided to the output signal. Thus, the hFE and the transistor’s capacitance, or Ccb, are two of the most important parameters in determining the transistor’s performance.

The D45H11 is designed to operate at a maximum collector current of 1.1A and a maximum collector-emitter voltage rating of 125V. Maximum hFE for the D45H11 is 500, implying an amplification capability of 500. The device also has a maximum power dissipation of 1.5W, making it suitable for a wide range of applications.

The D45H11 is typically used in switching applications as an amplifier. It can be used in digital logic gate circuits, as well as in Audio applications such as audio amplifiers. It can be used as a buffer for Amplifiers, due to its high current capacity, and can also be used in simple Linear Audio Amplifiers.

The D45H11 is a low-cost, high-performance device with a wide variety of applications. Its high hFE and low power dissipation make it ideal for use in switching and amplification applications. Its reliable performance and good hFE make it suitable for low-power applications and its low noise characteristics make it well-suited for use in audio-frequency applications.