D8V0L1B2LP-7B Circuit Protection |
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Allicdata Part #: | D8V0L1B2LP-7B-ND |
Manufacturer Part#: |
D8V0L1B2LP-7B |
Price: | $ 0.04 |
Product Category: | Circuit Protection |
Manufacturer: | Diodes Incorporated |
Short Description: | TVS DIODE 8V 17V DFN1006-2 |
More Detail: | N/A |
DataSheet: | D8V0L1B2LP-7B Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
10000 +: | $ 0.03030 |
Specifications
Current - Peak Pulse (10/1000µs): | 4A (8/20µs) |
Supplier Device Package: | X1-DFN1006-2 |
Package / Case: | 2-UFDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 8.5pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 68W |
Series: | -- |
Voltage - Clamping (Max) @ Ipp: | 17V |
Voltage - Breakdown (Min): | 8.5V |
Voltage - Reverse Standoff (Typ): | 8V (Max) |
Bidirectional Channels: | 1 |
Type: | Zener |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Description
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TVS Diodes, also known as Transient Voltage Suppression Diodes, are widely used in electronic circuits. They are specialized protection devices designed to suppress high-energy transient voltage events, such as electrostatic discharge (ESD), electrical fast transients (EFT), and inductive load switching. The D8V0L1B2LP-7B is a type of TVS diode featuring reliable ESD and surge protection performance, and a fast response time.
Application Field
The D8V0L1B2LP-7B is designed for use in data communications and consumer electronics, including phone systems, modems, digital cameras, MP3 players, smart phones, tablet PCs, and other portable electronic devices. This diode is also suitable for port protection in all types of digital consumer products and automotive electronics. It is also used in medical equipment, such as ECG monitors and life support systems.
Working Principle
The D8V0L1B2LP-7B utilizes the avalanche breakdown principle. It contains a PN junction, which serves as a reverse voltage protection. When the reverse voltage across the PN junction exceeds the diode’s breakdown voltage, electrons are accelerated from the n-type material to the p-type material. This results in an avalanche of current and a rapid increase in voltage across the diode. This phenomenon is known as avalanche breakdown.
When the transient voltage across the PN junction exceeds the breakdown voltage, the diode responds within the specified response time. It rapidly switches from a high impedance to a low impedance state and quickly dissipates the excess voltage. The transient voltage is clamped at a safe level, which prevents damage to connected circuits. Once the voltage drops below the breakdown voltage, the diode automatically restores to a high impedance state.
The D8V0L1B2LP-7B is designed with an internal I-V curve slope that reduces the risk of device destruction at higher pulse repetition rates. It is also equipped with an automatic retry function, which automatically resets the device in the event that it is subjected to a sustained overvoltage. This diode has a wide operating temperature range and is suitable for use in automotive applications.
The specific data is subject to PDF, and the above content is for reference
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