Allicdata Part #: | D970N08TXPSA1-ND |
Manufacturer Part#: |
D970N08TXPSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 800V 970A |
More Detail: | Diode Standard 800V 970A Chassis Mount |
DataSheet: | D970N08TXPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 970A |
Voltage - Forward (Vf) (Max) @ If: | 970mV @ 750A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 20mA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AA, A-PUK |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 180°C |
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D970N08TXPSA1 belongs to the category of Diodes - Rectifiers - Single, and is a product of NXP. It\'s an advanced rectifier MOSFET, designed to offer top performance with an extended range of temperatures and a low capacitance. It can deliver a steady state current of up to 60A and a peak pulsed current of up to 180A.
The MOSFET variant of the standard rectifier has an inherently reversing internal body diode, which allows current to flow in either direction. This makes it possible to use the MOSFET as a switch to control the flow of current. The reverse voltage capability is also quite high, allowing it to be used in applications where high breakdown voltages are needed.
The D970N08TXPSA1 offers superior performance for its temperature range and current delivery. The temperature range of -40°C to 175°C allows for operation in harsh environments without the need for special cooling. The on-state resistance level is low enough to ensure a low voltage drop even at high currents. The low capacitance also ensures that switching times remain low, translating into shorter response times.
The diode also offers excellent protection from overvoltage transients. The Avalanche Rating ensures that an overvoltage spike will not destroy the device, and the built-in clamp protects the downstream circuits from any major overvoltage conditions. The diode is also protected against reverse voltage surges, which makes it ideal for use in systems subject to power surges, such as automotive applications.
The working principle of the D970N08TXPSA1 is quite simple. When a voltage is applied to the gate it creates an electric field inside the MOSFET, which then causes the flow of channel current. This channel current is proportional to the gate voltage, and can be controlled by adjusting the gate voltage. The flow of current can be reversed by changing the polarity of the gate voltage. The current flow can be turned off by setting the gate voltage to zero or by turning off the current source.
D970N08TXPSA1 is suitable for use in many applications, due to its advanced features. It is perfect for automotive applications, where protection from overvoltage transients is required. It can also be used in industrial applications, where it can serve as a switch and regulator in power systems, and in renewable energy applications, where it can provide protection in energy storage systems. Lastly, it can be used in telecom applications, such as base station power supply, where it provides overvoltage protection and high current delivery capabilities.
The specific data is subject to PDF, and the above content is for reference
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