DAN217WTL Allicdata Electronics
Allicdata Part #:

DAN217WTLTR-ND

Manufacturer Part#:

DAN217WTL

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ARRAY GP 80V 100MA EMD3
More Detail: Diode Array 1 Pair Series Connection Standard 80V ...
DataSheet: DAN217WTL datasheetDAN217WTL Datasheet/PDF
Quantity: 3000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMD3
Base Part Number: DAN217
Description

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Diodes are widely used in a variety of applications depending on their characteristic features, such as rectification, temperature and stability. The DAN217WTL is a 2-channel Field Effect Transistor (FET) array in an SO-8 package that has been designed specifically for switching and rectification applications. In the following paragraphs, we will explain the application field and working principle behind the DAN217WTL.

The DAN217WTL is suitable for use in a wide range of switch and rectifier applications, such as OR-ing diodes, active rectification, noise suppression, level shifting and protection circuits. With a low forward voltage drop of 0.5V and high switching speed of 5 ns, the DAN217WTL makes it ideal for switching applications, providing the user with high efficiency and precision. The DAN217WTL is also designed for use in high voltage rectifier applications, providing improved noise immunity and ESD protection.

The DAN217WTL is a 4-pin Dual N-Channel FET (DNFET) array with a common source and gate. It is composed of two independent N-Channel FETs, each with a separate source and gate. The gate is connected to the source, and the source is connected to the drain, with the drain connected to the output. The FETs are configured in parallel, allowing for a high current capacity. Each FET has an adjustable threshold voltage, allowing for precise output current in a wide range of operating conditions. The device also provides a high switching speed, allowing for fast and efficient switching.

The DAN217WTL is designed to allow current to flow through an external device when the gate voltage rises above a certain threshold voltage. When the gate voltage is below this threshold voltage, the FETs are effectively switched off and the external device is in a reverse-biased state, preventing current flow. This threshold voltage is adjustable, allowing the user to increase or decrease the current level as required.

In addition to its rectification and switching functionality, the DAN217WTL also provides enhanced temperature stability and noise immunity thanks to its advanced monolithic technology. The device is designed to work with a wide range of voltages and temperatures, making it suitable for a variety of applications. The DAN217WTL also has additional features, such as ESD protection and high current capacity, that make it suitable for use in a wide range of applications.

In summary, the DAN217WTL is a versatile and powerful dual FET array that is designed for switching and rectification applications. With its low forward voltage drop, adjustable threshold voltage, temperature stability and noise immunity, the DAN217WTL provides users with an improved switching and rectification performance. The device also provides ESD protection, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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