
Allicdata Part #: | DAN217WTLTR-ND |
Manufacturer Part#: |
DAN217WTL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ARRAY GP 80V 100MA EMD3 |
More Detail: | Diode Array 1 Pair Series Connection Standard 80V ... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.05000 |
10 +: | $ 0.04850 |
100 +: | $ 0.04750 |
1000 +: | $ 0.04650 |
10000 +: | $ 0.04500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 70V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMD3 |
Base Part Number: | DAN217 |
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Diodes are widely used in a variety of applications depending on their characteristic features, such as rectification, temperature and stability. The DAN217WTL is a 2-channel Field Effect Transistor (FET) array in an SO-8 package that has been designed specifically for switching and rectification applications. In the following paragraphs, we will explain the application field and working principle behind the DAN217WTL.
The DAN217WTL is suitable for use in a wide range of switch and rectifier applications, such as OR-ing diodes, active rectification, noise suppression, level shifting and protection circuits. With a low forward voltage drop of 0.5V and high switching speed of 5 ns, the DAN217WTL makes it ideal for switching applications, providing the user with high efficiency and precision. The DAN217WTL is also designed for use in high voltage rectifier applications, providing improved noise immunity and ESD protection.
The DAN217WTL is a 4-pin Dual N-Channel FET (DNFET) array with a common source and gate. It is composed of two independent N-Channel FETs, each with a separate source and gate. The gate is connected to the source, and the source is connected to the drain, with the drain connected to the output. The FETs are configured in parallel, allowing for a high current capacity. Each FET has an adjustable threshold voltage, allowing for precise output current in a wide range of operating conditions. The device also provides a high switching speed, allowing for fast and efficient switching.
The DAN217WTL is designed to allow current to flow through an external device when the gate voltage rises above a certain threshold voltage. When the gate voltage is below this threshold voltage, the FETs are effectively switched off and the external device is in a reverse-biased state, preventing current flow. This threshold voltage is adjustable, allowing the user to increase or decrease the current level as required.
In addition to its rectification and switching functionality, the DAN217WTL also provides enhanced temperature stability and noise immunity thanks to its advanced monolithic technology. The device is designed to work with a wide range of voltages and temperatures, making it suitable for a variety of applications. The DAN217WTL also has additional features, such as ESD protection and high current capacity, that make it suitable for use in a wide range of applications.
In summary, the DAN217WTL is a versatile and powerful dual FET array that is designed for switching and rectification applications. With its low forward voltage drop, adjustable threshold voltage, temperature stability and noise immunity, the DAN217WTL provides users with an improved switching and rectification performance. The device also provides ESD protection, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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