DB2J31600L Discrete Semiconductor Products |
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Allicdata Part #: | DB2J31600LTR-ND |
Manufacturer Part#: |
DB2J31600L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | DIODE SCHOTTKY 30V 100MA SMINI2 |
More Detail: | Diode Schottky 30V 100mA Surface Mount SMini2-F5-B |
DataSheet: | DB2J31600L Datasheet/PDF |
Quantity: | 66000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 800ps |
Current - Reverse Leakage @ Vr: | 15µA @ 30V |
Capacitance @ Vr, F: | 2pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | SMini2-F5-B |
Operating Temperature - Junction: | 125°C (Max) |
Base Part Number: | DB2J316 |
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DB2J31600L application field and working principle
DB2J31600L is a single diode rectifier which is widely implemented in industrial, commercial, and residential power systems, with an ultrafast recovery time and very low reverse leakage current. This powerful device can handle currents up to 31 Amperes and reaching a peak repetitive reverse voltage of 1600V.
DB2J31600L’s application fields include AC and DC motor controls, solar power inverters, power factor correction circuits, as well as power supplies, UPS systems and other high-frequency applications. Moreover, due to its low forward voltage drop, this device is capable of greatly reducing power-supply conduction losses in many efficient electronic appliances, such as LED drivers and smart electronic circuit packages.
The structure of the DB2J31600L comprises three separate parts: (1) an Anode; (2) a Cathode; and (3) a PN Junction Barrier. The Anode is the positive terminal and is connected to the power supply. The Cathode is the negative terminal which is connected to the load. The internal PN Junction Barrier consists of two sections: the Anode-Cathode Barrier, which is created by forming an electric field between the Anode and Cathode; and the Barrier-Gate Barrier, which blocks the flow of current between the Anode and Cathode.
When a negative voltage is applied to the Cathode, the electrons in the Anode-Cathode Barrier will repel each other and the electrons in the Barrier-Gate Barrier will be attracted towards the positive voltage, thus forming a rectifying current. The electric field created between the Anode and Cathode limits the amount of current that can flow through the device, thus improving the safety and performance of the system.
The DB2J31600L can operate in a variety of conditions, including high temperature and humidity. Furthermore, the reverse breakdown voltage of this device is low, meaning that high reverse voltages cannot be sustained in the circuit. Because of this, it is important to make sure that the design of the circuit is such that the device will not experience extreme conditions.
In summary, the DB2J31600L is a single diode rectifier with an ultrapowerful recovery time and low reverse leakage current. Its application fields include AC and DC motor controls, power factor correction circuits, solar power inverters, power supplies, UPS systems and other high-frequency applications. Furthermore, the electric field created between the Anode and Cathode limits the amount of current that can flow through the device, thus improving the safety and performance of the system, while the reverse breakdown voltage is low so that high reverse voltages cannot be sustained in the circuit.
The specific data is subject to PDF, and the above content is for reference
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