DCG010-TL-E Allicdata Electronics
Allicdata Part #:

DCG010-TL-EOSTR-ND

Manufacturer Part#:

DCG010-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 80V 100MA 3MCP
More Detail: Diode Array 1 Pair Common Cathode Standard 80V 100...
DataSheet: DCG010-TL-E datasheetDCG010-TL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP
Description

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DCG010-TL-E are diodes-rectifiers-arrays and mainly used for suppression and fast switching between varied voltage ranges as well as noise reduction. This diode array consists of four(4) internally connected subunits arranged in series-parallel and each subunit consists of two 180° phase shifted, avalanche SBDs.SEPIC and Zeta® converters are the two most popular and widely used applications for DCG010-TL-E, along with other power management circuits and high-speed body diode switching (load switch) in DC-DC converters. This device is suitable for applications where sinusoidal AC is generated on the output side via a PFC.In order to maintain high-level performance, DCG010-TL-E must be mounted on an adequate and properly soldered PCB, as well as ensure a good thermal connection between the device and the heat sink or surface. This diode array has a low voltage drop, low forward voltage along with a wide temperature range which allows a smooth operating in various environments, from - 40 °C to + 150 °CThe working principle of DCG010-TL-E relies on four broadband, voltage-controlled N-Channel MOSFETs and two avalanche SBDs as main components. The MOSFETs are arranged in an H-bridge configuration so that a low on resistance is ensured.The N-channel MOSFETs inject efficiently drive current into the controlled load in a controlled manner, while the SBDs provide fast switching, resulting in reduced thermal stress. When the MOSFETs are non-conductive, the SBDs provide a path for the current to flow freely though.The device also offers protection against overvoltage, overcurrent, and short-circuit conditions, making it suitable for a wide range of applications. Furthermore, it is also available in space-saving packages, such as the SOT862 and SOT912 packages.In conclusion, DCG010-TL-E diodes-rectifiers-arrays are ideal for high-speed switching and noise reduction, as well as preventing the application from overcurrent and overvoltage damage. It is an effective way of providing wide temperature ranges, low voltages drop, low forward voltage and excellent thermal connections.

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