DCP56-16-13 Allicdata Electronics
Allicdata Part #:

DCP56-16-13-ND

Manufacturer Part#:

DCP56-16-13

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 80V 1A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 200MHz 1W Surf...
DataSheet: DCP56-16-13 datasheetDCP56-16-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.10634
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

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DCP56-16-13 is a type of single bipolar junction transistor (BJT), which is a three-terminal semiconductor device that can be used in the amplification or switching of electronic signals. It is one of the most important electronic devices in modern electronics, and is widely used in power electronic circuits such as motor control and power switching.

A bipolar junction transistor is formed when two different semiconductor materials (usually P type and N type) are attached to a junction. In the DCP56-16-13, a P type layer is formed by doping germanium with arsenic, and an N type layer is formed by doping germanium with phosphorous. When a voltage is applied to the base terminal of the device, a junction current is created, and the electrons from the N type region will flow to the P type region. This causes the electrons in the P type region to become more active, and the current between the collector and the emitter terminals increases.

The DCP56-16-13 has a maximum collector current of 1.6mA and a maximum collector-emitter voltage of 13V. It is well-suited for applications such as low power amplifiers and switching circuits, as it has an excellent linearity and low power dissipation. It is also suitable for use in low voltage and low power circuits, as the one-volt latching eliminates the need for a complicated circuit design or power supply. In addition, the device has a wide bandwidth, making it ideal for a variety of high speed applications.

The DCP56-16-13 is one of the most popular single bipolar junction transistors on the market today. It is used in applications such as power amplifier circuits, power switching circuits, low noise analog circuits, motor control circuits, and digital circuits. It is an excellent choice for a wide range of applications due to its low power consumption and wide bandwidth. Moreover, it has an excellent linearity and low power dissipation, making it an ideal device for low voltage, low power applications.

The DCP56-16-13 is an ideal device for a wide range of applications due to its wide bandwidth and excellent linearity. The device can be used in low noise analog circuits, low voltage and low power circuits, and motor control circuits. Its excellent linearity and low power dissipation make it an ideal choice for a variety of applications. In addition, the one-volt latching enables the device to operate at lower power levels without the need for a complicated circuit design or power supply.

The DCP56-16-13 is an effective single bipolar junction transistor that is used in a variety of applications. Its excellent linearity and low power dissipation make it an ideal choice for use in low voltage, low power circuits, and digital circuits. Its wide bandwidth makes it an ideal choice for a variety of high speed applications. Moreover, its one-volt latching allows it to operate at lower power levels without the need for a complicated circuit design or power supply.

The specific data is subject to PDF, and the above content is for reference

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