DCX52-16-13 Allicdata Electronics
Allicdata Part #:

DCX52-16-13DITR-ND

Manufacturer Part#:

DCX52-16-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 60V 1A SOT89-3
More Detail: Bipolar (BJT) Transistor PNP 60V 1A 200MHz 1W Surf...
DataSheet: DCX52-16-13 datasheetDCX52-16-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

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DCX52-16-13 belongs to the single bipolar junction transistor type, which is derived from the NPN type. It has many practical applications and can meet the needs of various industries.

DCX52-16-13 has a wide variety of core functions. It can be used to amplify linear signals, as a switching element that converts a small current into a larger current, as an oscillator and amplifier, as an emitter follower, as a current regulator, and for various linear, digital, and analog electronic circuits. They are commonly used in power supplies, amplifiers, converters, amplifier circuits, switching, and oscillators.

DCX52-16-13 can be applied in many fields, such as automotive and industrial, security and surveillance, personal electronics, aerospace, communication and computing, radio-frequency and microwave, radar, automotive and industrial control, LED lighting, and ultra-low power solutions.

The working principle of DCX52-16-13 is based on the principle of p-n junction. When a potential difference is applied across the two terminals, an electric field is formed perpendicular to the junction. This allows the flow of current between the two terminals and forms a p-n junction diode, known as leakage current. When the collector’s potential is higher than the base potential, the collector current starts to flow. The current at the collector increases with the increase of the base current, which gives rise to the emitter current. This emitter current is amplified by the collector current, producing an amplified voltage at the collector terminal.

DCX52-16-13 can operate at frequencies from a few hundred hertz to the radio frequency range. The device is widely used in various electronic circuits, including amplifiers, current and voltage regulators, oscillators, switches, digital and analog circuits, and various other electronic components. The construction of DCX52-16-13 is well designed for high-performance, low-power applications. It is an excellent choice for electronic engineers when choosing a transistor that can meet the needs of their application.

In conclusion, DCX52-16-13 is an NPN type transistor that is widely used in various fields and applications. It provides great performance and reliability while maintaining low-power solutions. With its wide range of application and ability to operate at the radio frequency range, it is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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