DD350N16KHPSA1

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Configuration:	1 Pair Series Connection
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1600V
Current - Average Rectified (Io) (per Diode):	350A
Voltage - Forward (Vf) (Max) @ If:	1.28V @ 1000A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	30mA @ 1600V
Operating Temperature - Junction:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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The DD350N16KHPSA1 belongs to the diode rectifiers - Arrays family. This device has many applications, mainly as an Input Filter for Switch Mode Power Supply applications, as a Snubber Diode for Power Factor Correction modules, Voltage Regulation and Inrush Current Limiting.The DD350N16KHPSA1 device is a 16A, 350V three-phase bridge rectifier with a planar structure and built-in TO-220 packages. It is specially designed for use in three-phase power supplies, UPS systems and other high power applications.The DD350N16KHPSA1\'s working principle is based on the principle of reverse conduction of diodes. This process is called "silicon together", which means that the internal junction of the device is reverse bias due to the presence of an electric field with the same polarity as that of the hole charges (due to the presence of positive voltage across the device). This electric field interferes with the minority carriers and prevents them from entering the junction, restricting diode current flow. The magnitude of the reverse current is inversely proportional to the effective area of the junction, which results in reduced conduction losses.The DD350N16KHPSA1 is designed for high-power, high-frequency applications, and can provide very low on-state losses in the reverse direction. It also has two reverse conduction parameters (Qrr and I2tF).Qrr is the reverse conduction speed of the diode, measured in volts per nanosecond and usually expressed as a peak current in amperes. Faster Qrr values mean faster switching times, which can be an important consideration in applications such as power supplies, UPS systems and other high power applications.I2tF is the reverse conduction time under limited sinusoidal voltage test conditions and expressed in ampere-square seconds. This is an important parameter to consider when estimating the device\'s thermal stress over time.In addition, the DD350N16KHPSA1 device features an avalanche ruggedness voltage, ensuring high dv/dt stability and peak pulse power capability.Overall, the DD350N16KHPSA1 is a robust device designed for high power applications, with excellent reverse conduction characteristics that make it ideal for three-phase power supplies, UPS systems, and other high power application fields. It is a reliable choice for high power applications, with its low on-state losses, reverse conduction parameters, as well as its avalanche ruggedness voltage.

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