Allicdata Part #: | DD750S65K3NOSA1-ND |
Manufacturer Part#: |
DD750S65K3NOSA1 |
Price: | $ 1.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 6500V 750A |
More Detail: | Diode Array 2 Independent Standard 6500V Chassis ... |
DataSheet: | DD750S65K3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
Diode Configuration: | 2 Independent |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 6500V |
Current - Average Rectified (Io) (per Diode): | -- |
Voltage - Forward (Vf) (Max) @ If: | 3.5V @ 750A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1100A @ 3600V |
Operating Temperature - Junction: | -50°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Diodes - Rectifiers - Arrays refer to a type of electrical device that consists of a collection of single diodes or equivalent transistors, arranged in order to perform a specific task. DD750S65K3NOSA1 is one such diode, and it has many excellent properties that make it suitable for a variety of applications.
Properties of DD750S65K3NOSA1
The DD750S65K3NOSA1 is a Silicon Carbon Rectifier Array that features an avalanche voltage of 68-73 V and is capable of withstanding anti-static rated peak currents of up to 650 amps. This diode is available in a dual-in-line form factor and features low forward voltage drop (Vf) of 1.22-1.4V and a normal forward voltage of 4.5-5.5V respectively. The typical reverse leakage current for this diode is 12 uA, and it offers a maximum reverse recovery time of 100 ns.
Application Field and Working Principle of DD750S65K3NOSA1
As mentioned above, the DD750S65K3NOSA1 diode is suitable for a number of applications due to its excellent properties. The most common application area for this diode is battery charging, where it can be used for both fast and slow charging of nickel-metal hydride, lithium ion, and lead acid batteries. When applied to a battery, the diode will automatically adjust the voltage and current output to maintain the proper charging profile.
Therefore, it can be used with a wide range of charging profiles, and its peak current rating of 650 amps makes it an ideal choice for applications where large currents need to be controlled. Additionally, this diode is also suitable for use in other general rectifier applications, such as AC/DC converters, power converters, and circuit protection. The operating principle behind the diode is fairly simple; it can be thought of as a switch connected in series with a resistor, where the diode allows current to flow if the voltage is high enough, and the resistor restricts current flow when the voltage is too low.
Benefits of using DD750S65K3NOSA1 Rectifier
The DD750S65K3NOSA1 diode offers several advantages when compared to other rectifier diodes available in the market. Firstly, it features a high peak current rating of 650 amps and a low forward voltage drop (~1.22-1.4V). This makes it suitable for high power applications, where current is an important parameter. Secondly, its fast recovery time of 100 ns allows for fast switching applications, and its low leakage current of 12 uA prevents power dissipation in quiescent modes. Lastly, its thermally enhanced packaging can further reduce power dissipation when used in high temperature environments.
Conclusion
The DD750S65K3NOSA1 diode is a versatile and efficient rectifier array which offers high current handling capability and a fast recovery time. This makes it suitable for a variety of applications, such as battery charging and general rectification. Furthermore, its low forward voltage drop and low leakage current further enhance its performance in various applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DD750S65K3NOSA1 | Infineon Tec... | 1.4 $ | 1000 | IGBT MODULE VCES 6500V 75... |
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