DE2S08200L Circuit Protection

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TVS - Diodes provide an effective method to reduce the amount of damage done to electrical equipment due to surges in voltage from external sources, such as lightning strikes. The DE2S08200L is one such diode designed to provide the highest level of surge protection available. This article will discuss the application field of the DE2S08200L and its working principle.

The DE2S08200L TVS-diode is an ultra-low-capacitance, unidirectional device designed to protect sensitive electronic circuits from overvoltage transients, typically found in the industrial, medical, automotive, and telecommunication markets. It is specifically designed to protect data and signal lines from ESD, EFT, surge, RF interference, and other potentially harmful overvoltage transients. The device is made up of a PNPN silicon structure with two low-capacitance, ultra-low leakage diode chips packaged together to offer voltage clamping.

In terms of application field, the DE2S08200L TVS-diode is most often used in applications that require high-speed data- or communication- line protection. It is ideal for applications such as network cards, routers, communicators, surveillance cameras, modems, FPGA, and other high-speed digital systems. The device also offers protection against EMI, EMP, and thermal transients, making it useful for applications that require high levels of immunity from EMI. The device is also resistant to electrostatic discharge, making it ideal for applications that require high levels of ESD protection.

The DE2S08200L TVS-diode offers high surge protection levels and fast response times while maintaining low capacitance levels. The device is able to protect against overvoltage transients up to 20 kilovolts (kV) and can handle up to 5A of current. The device is rated to operate within an operating temperature range of -55°C to 150°C, making it ideal for use in harsh environments. Furthermore, the device is RoHS compliant and has UL 94V-0 flammability rating, making it suitable for use in applications with stringent environmental regulations.

The working principle of the DE2S08200L TVS-diode is based on the PNPN silicon structure. This structure is composed of two PN diodes that are connected in series and then connected in parallel with two additional PN junctions. This arrangement creates a voltage clamp that will limit the voltage at the output of the device to a predetermined level. When the voltage exceeds this level, the PN junctions will clamp the voltage and the energy is dissipated as heat.

The DE2S08200L TVS-diode\'s working principle can also be explained using its capacitance-voltage (CV) behavior. The device\'s two component PN diode-structure creates a capacitance that increases with voltage. When the voltage reaches the device\'s clamping voltage, the capacitance will reach a peak and then the capacitance will decline as the voltage continues to increase.

The DE2S08200L TVS-diode\'s capacitance-voltage behavior is also responsible for its fast response time. When the voltage transient occurs, the device will quickly clamp the voltage before the energy can damage the equipment. This makes the device ideal for applications that require high levels of surge protection and fast response times.

In conclusion, the DE2S08200L TVS-diode is a unidirectional device designed to protect sensitive electronic circuits from overvoltage transients. It is specifically designed to protect data and signal lines from ESD, EFT, surge, and other potentially harmful transients. The device has a wide operating temperature range and is able to handle up to 5A of current. The device\'s working principle is based on the PNPN silicon structure and its capacitance-voltage behavior. In addition, the device offers fast response times, making it ideal for high-speed applications such as network cards, routers, communicators, surveillance cameras, modems, FPGA, and other digital systems.

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