DF200R12PT4B6BOSA1 Allicdata Electronics
Allicdata Part #:

DF200R12PT4B6BOSA1-ND

Manufacturer Part#:

DF200R12PT4B6BOSA1

Price: $ 128.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 200A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: DF200R12PT4B6BOSA1 datasheetDF200R12PT4B6BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 116.39700
Stock 1000Can Ship Immediately
$ 128.04
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
Current - Collector Cutoff (Max): 15µA
Input Capacitance (Cies) @ Vce: 12.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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DF200R12PT4B6BOSA1 is an IGBT module that is widely used in various industrial applications, from motor control to power conversion. It consists of six independent IGBTs in one half-bridge package with three phase control and a number of protection features. The device allows more precise and efficient power control, making it the ideal choice for down-sizing and efficient power control applications. Its optimized design combines an advanced IGBT technology with an integrated soft recovery anti-parallel diode, which enables smaller and higher-efficiency modules.

The DF200R12PT4B6BOSA1 performs complex power control tasks with advanced features. It has a current capability of up to 200 A and an output voltage of up to 670 V, which enables higher efficiency and more precise motor, generator, and energy conservation applications. The device includes two independent, high-efficiency soft recovery anti-parallel diodes, which allow for a better control of the IGBT’s output current. It also includes an advanced short circuit protection, overvoltage protection, overcurrent protection, undervoltage protection, and thermal protection.

The DF200R12PT4B6BOSA1 is ideal for motor control applications such as industrial robot, servo motor and Variable Frequency Drive (VFD) applications, as well as for various power measurement and management applications. It offers superior performance over traditional IGBT modules in terms of efficiency, reliability and cost-effectiveness. In addition, the device has good thermal properties, which enable higher operating temperatures and a more robust operation.

The module’s working principle is based on the use of N-type and P-type transistors that are coupled in a complementary arrangement. This enables the module to control the switching of heavy electrical currents with very high speed. When the module is turned on, a negative voltage (Voltage Positive) is applied to the P-type transistor, while a positive voltage (Voltage Negative) is applied to the N-type transistor. This causes the N-type transistor to conduct, thus allowing current to flow from the source to load. When the voltage positive is removed, the current flow is stopped and the cycle restarts.

The DF200R12PT4B6BOSA1 module is a valuable tool for advanced industrial power control applications. Its optimized design and advanced features make it an ideal choice for cost-effective and efficient power control. Its integrated protective features make it one of the most reliable and robust IGBT modules in its class.

The specific data is subject to PDF, and the above content is for reference

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